GT13003Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT13003Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.65 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 21 pF
Ganancia de corriente contínua (hfe): 19
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
GT13003Y Datasheet (PDF)
gt13003y.pdf

GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0
gt130n03d5.pdf

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
gt130n03d5.pdf

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: D62T8030 | DTA024EEB | ZTX454 | DMC56603 | KRC407V | BF393
History: D62T8030 | DTA024EEB | ZTX454 | DMC56603 | KRC407V | BF393



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