All Transistors. GT13003Y Datasheet

 

GT13003Y Datasheet and Replacement


   Type Designator: GT13003Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.65 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 19
   Noise Figure, dB: -
   Package: TO252
 

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GT13003Y Datasheet (PDF)

 ..1. Size:806K  cn shunye
 gt13003y.pdf pdf_icon

GT13003Y

GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0

 9.1. Size:708K  1
 gt130n03d5.pdf pdf_icon

GT13003Y

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)

 9.2. Size:708K  goford
 gt130n03d5.pdf pdf_icon

GT13003Y

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1261L | BC232V | GT1608 | GT100-9

Keywords - GT13003Y transistor datasheet

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