GT13003Y pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

GT13003Y Specs and Replacement

Type Designator: GT13003Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.65 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 19

Noise Figure, dB: -

Package: TO252

GT13003Y Substitution

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GT13003Y datasheet

..1. Size:806K cn shunye

gt13003y.pdf pdf_icon

GT13003Y High Voltage And High Speed Switching Transistors TO-252 0.094(2.38) 0.264(6.70) Features 0.087(2.20) 0.256(6.50) 0.022(0.56) 0.215(5.46) 0.018(0.46) 0.202(5.13) 2 =1.65A =800V 0.055(1.40) 0.031(0.80) 0.244(6.20) 0.236(6.00) 0.051(1.30) 0.409(10.40) 0.004(0.10) 0.043(1.10) 0.386( 9.80) MAX. 1 2 3 0.114(2.90) 0.067(1.70) REF. 0.055(1.40) 0.032(0.81) 0.022(0... See More ⇒

9.1. Size:708K 1

gt130n03d5.pdf pdf_icon

GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒

9.2. Size:708K goford

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