1701 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RN1701~RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1704,RN1705,RN1706 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a trans

Ordering number:EN3022PNP/NPN Epitaxial Planar Silicon Transistors2SA1701/2SC4481Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor driver applications.2064[2SA1701/2SC4481]Features Large current capacity. Low collector-to-emitter saturation voltage.E : Emitt

isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Complement to type PMD1601K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V