1701 Specs and Replacement
Type Designator: 1701
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 110
Package: TO92
1701 Substitution
- BJT ⓘ Cross-Reference Search
1701 datasheet
RN1701 RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1704,RN1705,RN1706 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr... See More ⇒
RN1701JE RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a trans... See More ⇒
Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt... See More ⇒
Detailed specifications: 16586 , 16606 , 1664 , 16656 , 16668 , 16810 , 16811 , 16924 , 2222A , 1702 , 17322 , 17323 , 17375 , 17389 , 17390 , 17391 , 17484 .
History: 142T2 | 16029 | 104NU70
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