MMBT2907A-H Todos los transistores

 

MMBT2907A-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT2907A-H
   Código: 2F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBT2907A-H

 

MMBT2907A-H Datasheet (PDF)

 ..1. Size:929K  cn salltech
mmbt2907a-l mmbt2907a-h.pdf

MMBT2907A-H
MMBT2907A-H

 ..2. Size:786K  cn shandong jingdao microelectronics
mmbt2907a-l mmbt2907a-h.pdf

MMBT2907A-H
MMBT2907A-H

Jingdao Microelectronics co.LTD MMBT2907AMMBT2907ASOT-23PNP TRANSISTOR3FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -60 V2.EMITTER3.COLLECTORColle

 4.1. Size:307K  panjit
mmbt2907a-au.pdf

MMBT2907A-H
MMBT2907A-H

MMBT2907A-AUPNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWattVOLTAGE 60 VoltFEATURESPNP epitaxial silicon, planar design 0.120(3.04)0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mAAEC-Q101 qualifiedLead free in compliance with EU RoHS 2.0 0.056(1.40)Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)

 4.2. Size:143K  comchip
mmbt2907a-g.pdf

MMBT2907A-H
MMBT2907A-H

General Purpose TransistorMMBT2907A-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction -Device is designed as a general purpose0.118(3.00)0.110(2.80)amplifier and switching.3 -Useful dynamic range exceeds to 600mA0.055(1.40)0.047(1.20) As a switch and to 100MHz as an amplifier.1 20.079(2.00)0.071(1.80)0.006(0.15)0.003(0.08)0.041(1.05)0.

 4.3. Size:4000K  msksemi
mmbt2907a-ms.pdf

MMBT2907A-H
MMBT2907A-H

www.msksemi.comMMBT2907A-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A-MS)1. BASEMarking: 2F 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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