MMBT2907A-H Specs and Replacement
Type Designator: MMBT2907A-H
SMD Transistor Code: 2F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
MMBT2907A-H Substitution
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MMBT2907A-H datasheet
Jingdao Microelectronics co.LTD MMBT2907A MMBT2907A SOT-23 PNP TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -60 V 2.EMITTER 3.COLLECTOR Colle... See More ⇒
MMBT2907A-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 60 Volt FEATURES PNP epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) ... See More ⇒
General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.... See More ⇒
Detailed specifications: 2SD1628-F, 2SD1628-G, C945H, C945L, GT13003Y, L8550HQ, MMBT2222A-H, MMBT2222A-L, BDT88, MMBT2907A-L, MMBT3904-H, MMBT3904J, MMBT3904-L, MMBT3906-H, MMBT3906-L, MMBT4401H, MMBT4403H
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