PXT2222A-P1P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PXT2222A-P1PNPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base Gen

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXT2222ANPN switching transistorProduct data sheet 2004 Nov 22Supersedes data of 1999 Apr 14NXP Semiconductors Product data sheetNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base General pu

PXT2222ANPN switching transistors2 April 2014 Product data sheet1. General descriptionNPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package.PNP complement: PXT2907A2. Features and benefits High current: max. 600 mA Low voltage: max. 40 V3. Applications Switching and linear amplification4. Quick ref

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO C

PXT2222ATRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo

PXT2222A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B3. EMITTER 4.42 1.61.81.41.43Features2.64.252.43.75 Epitaxial planar die construction 0.8MIN Complementary PNP Type available(PXT2907A) 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime

FM120-MWILLASTHRUPXT2222ASOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free Produ Package outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123HSOT-89 TRANSISTOR (NPN) Low profile surface mounted

SMD Type TransistorsNPN TransistorsPXT2222A (KXT2222A)1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

PXT2222ASOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 LFEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING: 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E

PXT2222ANPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage