PXT2222A-P1P Todos los transistores

PXT2222A-P1P NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base Gen

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXT2222A NPN switching transistor Product data sheet 2004 Nov 22 Supersedes data of 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base General pu

PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface- Mounted Device (SMD) plastic package. PNP complement PXT2907A 2. Features and benefits High current max. 600 mA Low voltage max. 40 V 3. Applications Switching and linear amplification 4. Quick ref

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO C

PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo

PXT2222A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 3. EMITTER 4.4 2 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Epitaxial planar die construction 0.8 MIN Complementary PNP Type available(PXT2907A) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime

FM120-M WILLAS THRU PXT2222A SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-89 TRANSISTOR (NPN) Low profile surface mounted

SMD Type Transistors NPN Transistors PXT2222A (KXT2222A) 1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

PXT2222A SOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E

PXT2222A NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage