Биполярный транзистор PXT2222A-P1P - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PXT2222A-P1P
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 8(max) pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT89
Аналоги (замена) для PXT2222A-P1P
PXT2222A-P1P Datasheet (PDF)
pxt2222a-p1p.pdf
PXT2222A-P1PNPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo
pxt2222a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base Gen
pxt2222a.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXT2222ANPN switching transistorProduct data sheet 2004 Nov 22Supersedes data of 1999 Apr 14NXP Semiconductors Product data sheetNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base General pu
pxt2222a.pdf
PXT2222ANPN switching transistors2 April 2014 Product data sheet1. General descriptionNPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package.PNP complement: PXT2907A2. Features and benefits High current: max. 600 mA Low voltage: max. 40 V3. Applications Switching and linear amplification4. Quick ref
pxt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO C
pxt2222a.pdf
PXT2222ATRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo
pxt2222a.pdf
PXT2222A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B3. EMITTER 4.42 1.61.81.41.43Features2.64.252.43.75 Epitaxial planar die construction 0.8MIN Complementary PNP Type available(PXT2907A) 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime
pxt2222a.pdf
FM120-MWILLASTHRUPXT2222ASOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free Produ Package outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123HSOT-89 TRANSISTOR (NPN) Low profile surface mounted
pxt2222a.pdf
SMD Type TransistorsNPN TransistorsPXT2222A (KXT2222A)1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector
pxt2222a.pdf
PXT2222ASOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 LFEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING: 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E
pxt2222a.pdf
PXT2222ANPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
