SS8050L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RUMW UMW SS8050SOT-23 Plastic-Encapsulate TransistorsSOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Therm

SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

SS8050 Features Complimentary to SS8550 Collector Current: IC=1.5A SOT-23AMarking Code:Y 1Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00 J0.013 0.10KMAXIMUM RATINGS (Ta=25 unless otherwise noted) K0.903 1.10JL0.45 0.61

SS8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.015003002.44170.12540100 5.0100u0.15350.15 u4.0WEITRON 27-Jul-20121/2http://www.weitron.com.twSS8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gai

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

MMBTSS8050NPN Silicon General Purpose Transistors FeaturesSOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is availableMechanical data Epoxy:UL94-V0 rated flame retardant(B)(C) Case : Molded plastic, SOT-23(A) Terminals : Solder plated, solderable perMIL-STD-750, Method 20260.063 (1.60)0.027 (0.67)