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MMBTH10C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTH10C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 0.7(max) pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTH10C

 

MMBTH10C Datasheet (PDF)

 ..1. Size:3748K  cn twgmc
mmbth10a mmbth10b mmbth10c.pdf pdf_icon

MMBTH10C

MMBTH10 MMBTH10 MMBTH10 MMBTH10 MMBTH10 TRANSISTOR(NPN) SOT-23 FEATURES VHF/UHF Transistor 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 m

 7.1. Size:88K  motorola
mmbth10lt1rev0d.pdf pdf_icon

MMBTH10C

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI

 7.2. Size:738K  fairchild semi
mmbth10 mpsh10.pdf pdf_icon

MMBTH10C

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 7.3. Size:45K  fairchild semi
mmbth10rg.pdf pdf_icon

MMBTH10C

MMBTH10RG NPN RF Transistor C This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C un

Otros transistores... 2SC4617S , 3DD13003F6 , B772E , B772Q , D882E , MMBT3904N3 , MMBTH10A , MMBTH10B , 9014 , PXT8050-D1 , PXT8050-D2 , PXT8550D1 , PXT8550D2 , S8550E , SEBC847BU , SEBC847CU , SEBT3904U .

History: CHIMH2GP | 2SC4563 | 2SB789A | UMG11N | PXTA14 | BDX27-16 | NB212ZJ

 

 
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