PXT8550D1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PXT8550D1
Código: Y2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 20(max) pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
- Selección de transistores por parámetros
PXT8550D1 Datasheet (PDF)
pxt8550c pxt8550d pxt8550d1 pxt8550d2.pdf

PXT8550PXT8550PXT8550 PXT8550 TRANSISTOR (PNP)SOT-89FEATURESCompliment to PXT8050 MARKING: Y21. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)3. EMITTER Symbol Parameter Value UnitV Collector-Base Voltage -40 VCBOVCEO Collector-Emitter Voltage -25 VV Emitter-Base Voltage -5 VEBOI Collector Current -Continuous -1.5 ACP Collector Power
pxt8550c pxt8550d.pdf

PXT8550PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 1.5 APower Dissipation Ptot
pxt8550-b-c-d-d3.pdf

M C CTMPXT8550-BMicro Commercial Components PXT8550-CMicro Commercial Components20736 Marilla Street ChatsworthPXT8550-DCA 91311Phone: (818) 701-4933PXT8550-D3Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Marking:Y2/8550Plas
pxt8550.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8550 TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT8050 2. COLLECTOR MARKING: Y2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Bas
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3839 | 2SC1319 | BCV61B | CSD794R | CTP1108 | 810BLYA | MJ4210
History: 2N3839 | 2SC1319 | BCV61B | CSD794R | CTP1108 | 810BLYA | MJ4210



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mje15032g | irf1404 | bc550 | irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet