2SA13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications High DC current gain and excellent linearity : h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.), (V = 1 V, I = -4 A) FE (2) CE C Low saturation voltage : V = -0.5 V (max) (I = -2 A, I = -50 mA) CE

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120~400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat)(I = -2 A,

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2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC3423 Small collector output capacitance: Cob = 2.5 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColle

2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, V = -300 V CEO Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 6 pF (typ

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

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2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = -250 V Low C : 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -250 VCollector-emi

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage: VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Sm

Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating

Ordering number:EN1334CPNP/NPN Epitaxial Planar Silicon Transistors2SA1319/2SC3332High-Voltage Switching ApplicationsFeatures Package Dimensions Hgih breakdown voltage.unit:mm Excellent hFE linearity.2003A Wide ASO and highly resistant to breakdown.[2SA1319/2SC3332] Adoption of MBIT process.Switching Test CircuitJEDEC : TO-92 B : Base(For PNP, the polarit

Ordering number:EN1425CPNP/NPN Epitaxial Planar Silicon Transistors2SA1380/2SC3502Ultrahigh-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent2009Bhigh-frequnecy characteristics[2SA1380/2SC3502]: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio

Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin

Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr

Ordering number:EN1426BPNP/NPN Epitaxial Planar Silicon Transistors2SA1381/2SC3503High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 300V.unit:mm Small reverse transfer capacitance and excellent high2009Afrequency characteristic[2SA1381/2SC3503]: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

Ordering number:EN1412CPNP/NPN Epitaxial Planar Silicon Transistors2SA1370/2SC3467High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1370/2SC3467]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfrequency charac

Ordering number:EN1413CPNP/NPN Epitaxial Planar Silicon Transistors2SA1371/2SC3468High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1371/2SC3468]Features High breakdown votage : VCEO 300V. Small reverse transfer capacitance and excellent highfrequency charact

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq

March 20082SA1381/KSA1381PNP Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequenc

DATA SHEETSILICON POWER TRANSISTOR2SA1395PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching, and is ideal for use as a driver in devices such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that does not req

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE* h =140-600, (V = -1V,I = -0.5A) FE(1) CE C* h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C* Low Saturation Voltage * V =

2SA1374Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SA1374Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mABase current IB 30 mACollector power

2SA1390Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SA1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mACollector power dissipation PC 300 mWJu

2SA1337Silicon PNP EpitaxialApplication Low frequency low noise amplifier HF amplefierOutlineSPAK1. Emitter122. Collector33. Base2SA1337Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector

2SA1350Silicon PNP EpitaxialApplication Low frequency low noise amplifier HF amplefierOutlineSPAK1. Emitter122. Collector33. Base2SA1350Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector

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2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G HAPPLICATIONS Emitter Capable of Being Used in The Low Frequency to High Collector Base Frequency Range JA DMillimeterREF.CLASSIF

2SA1301 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SC3280ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -12 A Co

2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W

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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA1300 TRANSISTOR (PNP) TO-92FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1313 TRANSISTOR (PNP)FEATURES Excellent hFE Linearity: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min)1. BASE Complements to the 2SC3325.2. EMITTER3. COLLECTORMARKING : ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

JMnic Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION With TO-220 package Complement to type 2SC3514 High transition frequency APPLICATIONS Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbs

JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION With TO-220Fa package Complement to type 2SC3568 Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1301 DESCRIPTION With TO-3PL package Complement to type 2SC3280 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complementary to 2SC3540 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION With MT-200 package Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplifi

JMnic Product Specification Silicon PNP Power Transistors 2SA1355 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mountin

JMnic Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time High DC current gain APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

JMnic Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION With TO-220Fa package Complement to type 2SC3296 High breakdown voltage APPLICATIONS Power amplifier applications Vertical output applicatios PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolu

JMnic Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION With TO-220Fa package Low collector saturation voltage High transition frequency APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -160

JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

LAPT 2SA1386/1386ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.80.415.62SA1386 2SA1386A 2SA1386 2SA1386A0.19.6 2.0VCBO 160 180 V 1

LAPT 2SA1303Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)Application : Audio and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 150 V ICBO VCB=150V 100max AVCEO 150 V IEBO VEB

2SA1300(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

2SA1313 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features Excellent hFE Linearity 2.80 1.60: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90MARKING : ACO,ACY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

TO-92 Plastic-Encapsulate Transistors2SA13002SA13002SA1300 TRANSISTOR (PNP)2SA1300FEATURESFEATURESFEATURESFEATURESTO-92TO-92TO-92TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearityLow saturation voltag

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package

RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem

RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem

SMD Type TransistorsPNP Transistors 2SA1314Features1.70 0.1Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)Small Flat Package0.42 0.10.46 0.1Complementary to 2SC29821.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

SMD Type TransistorsPNP Transistors2SA1366SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-400mA Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3441+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type orSMD Type TransistICsPNP Transistors 2SA1362SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesSuitable for driver stage of small motor.Small package.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO

SMD Type TransistorsPNP Transistors 2SA1385-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7FeaturesLow VCE(sat):VCE(sat)=-0.18 V TYP. Complement to 2SC3518-Z0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base volta

SMD Type TransistorsPNP Transistors 2SA13641.70 0.1FeaturesHigh Voltage VCEO = -60VHigh Collector Current (IC = -1A)High Collector Dissipation PC = 500mW0.42 0.1Small Package For Mounting 0.46 0.1Complementary to 2SC34441.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -60 VCollector-Emitter Voltag

SMD Type TransistorsPNP Transistors 2SA1363Features1.70 0.1High hFE : hFE = 150 to 800High Collector Current (IC = -2A)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34431.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -20 VCollector-Emitter Vo

SMD Type TransistorsPNP Transistors2SA1384SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-300V Complementary to 2SC35150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage V

SMD Type orSMD Type TransistICsPNP Transistors 2SA1338SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High breakdown voltage : VCEO=-50V.1 2Large current capacitiy and high fT.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1Ultrasmall-sized package permitting setsto be smallsized, slim.1.Base Complementary to 2SC33922.Emitter3

SMD Type TransistorsPNP Transistors 2SA1368Features 1.70 0.1High Voltage VCEO = -100VHigh Collector Current (ICM = -800mA)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34381.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -100 VCollector-Emitter

SMD Type TransistorsPNP Transistors2SA1312SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-120V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1 Complementary to 2SC3324 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors 2SA1330SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh DC current gain.High voltage.1 2+0.05 Complementary to 2SC3360 0.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -2

SMD Type TransistorsPNP Transistors2SA1341SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC33951.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

SMD Type orSMD Type TransistICsPNP Transistors 2SA1365SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesLow collector to emitter saturation voltage.Excellent linearity nof DC forward current gain.1 2+0.1+0.050.95 -0.1Super mini package for easy mounting. 0.1-0.01+0.11.9 -0.1High collector current.High gain band width product.1.Base Complementary t

SMD Type orSMD Type TransistICsPNP Transistors 2SA1331SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesFast switching speed.High breakdown voltage.1 2 Small-sized package permitting the 2SA1331/+0.050.95+0.1-0.1 0.1 -0.012SC3361-applied sets to be made small and slim. 1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Sy

SMD Type TransistorsPNP Transistors2SA1344SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC3398 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type orSMD Type TransistICsPNP Transistors2SA1313SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh voltage: VCEO = -50 V (min)1 2Small package+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-e

SMD Type TransistorsPNP Transistors 2SA13691.70 0.1FeaturesHigh Collector Current (ICM = -3A, IC = -1.5A)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34391.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -20 V

SMD Type TransistorsPNP Transistors2SA1342SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SC33961.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

2SA1371(3CA1371) PNP /SILICON PNP TRANSISTOR : Purpose: Color TV chroma output and high breakdown voltage driver. :,, Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Abso

2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash applications, audio power amplifier applications. I V C CE(sat)Features: High I ,low V . CCE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO

2SA1370(3CA1370) PNP /SILICON PNP TRANSISTOR :/Purpose: Color TV chroma output and high breakdown voltage driver. :,,/Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

2SA1359(3CA1359) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier and low speed switching applications. : 2SC3422(3DA3422) Features: Good linearity of h ,complementary to 2SC3422(3DA3422). FE/Absolute maximum ratings(Ta=25)

isc Silicon PNP Power Transistor 2SA1395DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -1ACE(sat) CHigh Switching SpeedComplement to Type 2SC3567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SA1383DESCRIPTIONTO-220 packageHigh Collector-Emitter Breakdown VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collecto

isc Silicon PNP Power Transistor 2SA1396DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -5ACE(sat) CHigh Switching SpeedComplement to Type 2SC3568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306AComplement to Type 2SC3298/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1301DESCRIPTIONHigh Power DissipationCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SC3280Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequency amplifieroutput stage applications

isc Silicon PNP Power Transistor 2SA1352DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -200V (Min)(BR)CEOComplement to Type 2SC3416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica

isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SA1388DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3540Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOComplement to Type 2SC3423Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1389DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsDC-DC convertersABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1355DESCRIPTIONTO-220 packageHigh DC Current GainLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which isFE CE(sat)ideal for use as a driver in DC/DC converters an

isc Silicon PNP Power Transistor 2SA1387DESCRIPTIONHigh DC Current Gain-: h = 150(Min.) @ I = -1AFE CHigh Switching SpeedLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SA1386DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1307DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1308DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SC3308Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Coll

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistors 2SA1386/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1386(BR)CEO= -180V(Min)-2SA1386AGood Linearity of hFEComplement to Type 2SC3519/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =

isc Silicon PNP Power Transistor 2SA1304DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOComplement to Type 2SC3296Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOComplement to Type 2SC3298Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1328DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1358-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SA1359DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3422Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25

isc Silicon PNP Power Transistor 2SA1333DESCRIPTIONHigh Collector-Emitter Breakdown VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collec

isc Silicon PNP Power Transistor 2SA1305DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp

isc Silicon PNP Power Transistor 2SA1332DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter

isc Silicon PNP Power Transistor 2SA1303DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1357DESCRIPTIONHigh Collector Current-I = -5.0ACDC Current Gain-: h = 70(Min)@I = -4AFE CLow Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATI

isc Silicon PNP Power Transistor 2SA1358DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOComplement to Type 2SC3421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto