2SA13 - описание и поиск аналогов

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit mm Audio Power Applications High DC current gain and excellent linearity h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C h = 60 (min), 120 (typ.), (V = 1 V, I = -4 A) FE (2) CE C Low saturation voltage V = -0.5 V (max) (I = -2 A, I = -50 mA) CE

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = -1 V, I = -0.5 A) FE (1) CE C h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage V = -0.5 V (max) CE (sat) (I = -2 A,

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2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC3423 Small collector output capacitance Cob = 2.5 pF (typ.) High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Colle

2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 HIGH Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, V = -300 V CEO Low saturation voltage V = -0.5 V (max) CE (sat) Small collector output capacitance C = 6 pF (typ

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE hFE = 200 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 to 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

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2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = -250 V Low C 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emi

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Sm

Ordering number EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC TO-92 B Base ( ) 2SA1391 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Rating

Ordering number EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions Hgih breakdown voltage. unit mm Excellent hFE linearity. 2003A Wide ASO and highly resistant to breakdown. [2SA1319/2SC3332] Adoption of MBIT process. Switching Test Circuit JEDEC TO-92 B Base (For PNP, the polarit

Ordering number EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio

Ordering number EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A [2SA1392/2SC3383] JEDEC TO-92 B Base ( ) 2SA1392 EIAJ SC-43 C Collector SANYO NF E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin

Ordering number EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage VCEO 300V. Excellent high fr

Ordering number EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 300V. unit mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of

Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo

Ordering number EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions Very small-sized package permitting sets to be small- unit mm sized, slim. 2033 High breakdown voltage VCEO=( )50V. [2SA1339/2SC3393] Complementary pair transistor having large current capacity and high fT. Adoption o

Ordering number EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1370/2SC3467] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high frequency charac

Ordering number EN1413C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1371/2SC3468] Features High breakdown votage VCEO 300V. Small reverse transfer capacitance and excellent high frequency charact

Ordering number EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO=( )50V. 2018A Large current capacitiy and high fT. [2SA1338/2SC3392] Very small-sized package permitting sets to be small- sized, slim. Switching Time Test

Ordering number EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high freq

March 2008 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage VCEO= -300V Low Reverse Transfer Capacitance Cre= 2.3pF at VCB = -30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequenc

DATA SHEET SILICON POWER TRANSISTOR 2SA1395 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does not req

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte

Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.

Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE * h =140-600, (V = -1V,I = -0.5A) FE(1) CE C * h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C * Low Saturation Voltage * V =

2SA1374 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Base current IB 30 mA Collector power

2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 300 mW Ju

2SA1337 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1337 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector

2SA1350 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1350 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector

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2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G H APPLICATIONS Emitter Capable of Being Used in The Low Frequency to High Collector Base Frequency Range J A D Millimeter REF. CLASSIF

2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -12 A Co

2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1313 TRANSISTOR (PNP) FEATURES Excellent hFE Linearity hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 1. BASE Complements to the 2SC3325. 2. EMITTER 3. COLLECTOR MARKING ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

JMnic Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION With TO-220 package Complement to type 2SC3514 High transition frequency APPLICATIONS Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs

JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION With TO-220Fa package Complement to type 2SC3568 Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 )

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1301 DESCRIPTION With TO-3PL package Complement to type 2SC3280 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complementary to 2SC3540 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION With MT-200 package Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplifi

JMnic Product Specification Silicon PNP Power Transistors 2SA1355 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mountin

JMnic Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time High DC current gain APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

JMnic Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION With TO-220Fa package Complement to type 2SC3296 High breakdown voltage APPLICATIONS Power amplifier applications Vertical output applicatios PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolu

JMnic Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION With TO-220Fa package Low collector saturation voltage High transition frequency APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160

JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

LAPT 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 2SA1386 2SA1386A 2SA1386 2SA1386A 0.1 9.6 2.0 VCBO 160 180 V 1

LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application Audio and General Purpose (Ta=25 C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 150 V ICBO VCB= 150V 100max A VCEO 150 V IEBO VEB

2SA1300(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

2SA1313 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity 2.80 1.60 hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90 MARKING ACO,ACY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

TO-92 Plastic-Encapsulate Transistors 2SA1300 2SA1300 2SA1300 TRANSISTOR (PNP) 2SA1300 FEATURES FEATURES FEATURES FEATURES TO-92 TO-92 TO-92 TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity Low saturation voltag

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini package silicon PNP epitaxial transistor, L2SA1365*LT1G designed with high collector current and small VCE(sat). . S-L2SA1365*LT1G FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3 Excellent linearity of DC forward current gain. Super mini package

RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem

RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem

SMD Type Transistors PNP Transistors 2SA1314 Features 1.70 0.1 Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SC2982 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

SMD Type Transistors PNP Transistors 2SA1366 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-400mA Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3441 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type or SMD Type TransistICs PNP Transistors 2SA1362 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Suitable for driver stage of small motor. Small package. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO

SMD Type Transistors PNP Transistors 2SA1385-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low VCE(sat) VCE(sat)=-0.18 V TYP. Complement to 2SC3518-Z 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta

SMD Type Transistors PNP Transistors 2SA1364 1.70 0.1 Features High Voltage VCEO = -60V High Collector Current (IC = -1A) High Collector Dissipation PC = 500mW 0.42 0.1 Small Package For Mounting 0.46 0.1 Complementary to 2SC3444 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltag

SMD Type Transistors PNP Transistors 2SA1363 Features 1.70 0.1 High hFE hFE = 150 to 800 High Collector Current (IC = -2A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3443 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Vo

SMD Type Transistors PNP Transistors 2SA1384 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-300V Complementary to 2SC3515 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage V

SMD Type or SMD Type TransistICs PNP Transistors 2SA1338 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High breakdown voltage VCEO=-50V. 1 2 Large current capacitiy and high fT. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Ultrasmall-sized package permitting sets to be smallsized, slim. 1.Base Complementary to 2SC3392 2.Emitter 3

SMD Type Transistors PNP Transistors 2SA1368 Features 1.70 0.1 High Voltage VCEO = -100V High Collector Current (ICM = -800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3438 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter

SMD Type Transistors PNP Transistors 2SA1312 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-120V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 Complementary to 2SC3324 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1330 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC current gain. High voltage. 1 2 +0.05 Complementary to 2SC3360 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -2

SMD Type Transistors PNP Transistors 2SA1341 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC3395 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

SMD Type or SMD Type TransistICs PNP Transistors 2SA1365 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 +0.1 +0.05 0.95 -0.1 Super mini package for easy mounting. 0.1-0.01 +0.1 1.9 -0.1 High collector current. High gain band width product. 1.Base Complementary t

SMD Type or SMD Type TransistICs PNP Transistors 2SA1331 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Fast switching speed. High breakdown voltage. 1 2 Small-sized package permitting the 2SA1331/ +0.05 0.95+0.1 -0.1 0.1 -0.01 2SC3361-applied sets to be made small and slim. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Sy

SMD Type Transistors PNP Transistors 2SA1344 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC3398 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type or SMD Type TransistICs PNP Transistors 2SA1313 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = -50 V (min) 1 2 Small package +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-e

SMD Type Transistors PNP Transistors 2SA1369 1.70 0.1 Features High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3439 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V

SMD Type Transistors PNP Transistors 2SA1342 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SC3396 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

2SA1371(3CA1371) PNP /SILICON PNP TRANSISTOR Purpose Color TV chroma output and high breakdown voltage driver. , , Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Abso

2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash applications, audio power amplifier applications. I V C CE(sat) Features High I ,low V . C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO

2SA1370(3CA1370) PNP /SILICON PNP TRANSISTOR /Purpose Color TV chroma output and high breakdown voltage driver. , , /Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

isc Silicon PNP Power Transistor 2SA1395 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max)@ I = -1A CE(sat) C High Switching Speed Complement to Type 2SC3567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SA1383 DESCRIPTION TO-220 package High Collector-Emitter Breakdown Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collecto

isc Silicon PNP Power Transistor 2SA1396 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max)@ I = -5A CE(sat) C High Switching Speed Complement to Type 2SC3568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE

INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A Complement to Type 2SC3298/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif

isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION High Power Dissipation Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC3280 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications

isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V (Min) (BR)CEO Complement to Type 2SC3416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica

isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max.)@I = -8A CE(sat) C High DC Current Gain- hFE= 70(Min.)@ I = -8A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon PNP Power Transistor 2SA1388 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3540 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Complement to Type 2SC3423 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1355 DESCRIPTION TO-220 package High DC Current Gain Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which is FE CE(sat) ideal for use as a driver in DC/DC converters an

isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3519 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3299 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1308 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SC3308 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Coll

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1386 (BR)CEO = -180V(Min)-2SA1386A Good Linearity of h FE Complement to Type 2SC3519/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon PNP Power Transistor 2SA1304 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Complement to Type 2SC3296 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC3298 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon PNP Power Transistor 2SA1359 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3422 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

isc Silicon PNP Power Transistor 2SA1333 DESCRIPTION High Collector-Emitter Breakdown Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collec

isc Silicon PNP Power Transistor 2SA1305 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3297 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amp

isc Silicon PNP Power Transistor 2SA1332 DESCRIPTION Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter

isc Silicon PNP Power Transistor 2SA1303 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION High Collector Current-I = -5.0A C DC Current Gain- h = 70(Min)@I = -4A FE C Low Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATI

isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Complement to Type 2SC3421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto