2SA1306B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306AComplement to Type 2SC3298/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOComplement to Type 2SC3298Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM