2SA1306B - описание и поиск аналогов

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amp

INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A Complement to Type 2SC3298/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE

INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC3298 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM