2SA1306Y
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1306Y
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 160
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 30
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SA1306Y
2SA1306Y
Datasheet (PDF)
7.2. Size:159K jmnic
2sa1306 2sa1306a 2sa1306b.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
7.3. Size:188K inchange semiconductor
2sa1306 2sa1306a.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306AComplement to Type 2SC3298/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif
7.4. Size:140K inchange semiconductor
2sa1306 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE
7.5. Size:192K inchange semiconductor
2sa1306.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOComplement to Type 2SC3298Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM
7.6. Size:218K inchange semiconductor
2sa1306 2sa1306a 2sa1306b.pdf
isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp
Otros transistores... 2SA1306
, 2SA1306A
, 2SA1306AO
, 2SA1306AY
, 2SA1306B
, 2SA1306BO
, 2SA1306BY
, 2SA1306O
, S9013
, 2SA1307
, 2SA1307O
, 2SA1307Y
, 2SA1308
, 2SA1309
, 2SA1309A
, 2SA131
, 2SA1310
.
