2SA1306Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1306Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO218
2SA1306Y Transistor Equivalent Substitute - Cross-Reference Search
2SA1306Y Datasheet (PDF)
2sa1306 2sa1306a 2sa1306b.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
2sa1306 2sa1306a.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306AComplement to Type 2SC3298/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif
2sa1306 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE
2sa1306.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOComplement to Type 2SC3298Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM
2sa1306 2sa1306a 2sa1306b.pdf
isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp
Datasheet: 2SA1306 , 2SA1306A , 2SA1306AO , 2SA1306AY , 2SA1306B , 2SA1306BO , 2SA1306BY , 2SA1306O , 2N4401 , 2SA1307 , 2SA1307O , 2SA1307Y , 2SA1308 , 2SA1309 , 2SA1309A , 2SA131 , 2SA1310 .
History: HA1695 | 2N5825 | 2SC3552 | 2SC100 | TTA0002 | 2SA1306B | KTA1940
History: HA1695 | 2N5825 | 2SC3552 | 2SC100 | TTA0002 | 2SA1306B | KTA1940
LIST
Last Update
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D