2SA1316GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications High DC current gain and excellent linearity : h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.), (V = 1 V, I = -4 A) FE (2) CE C Low saturation voltage : V = -0.5 V (max) (I = -2 A, I = -50 mA) CE

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage: VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Sm

Ordering number:EN1334CPNP/NPN Epitaxial Planar Silicon Transistors2SA1319/2SC3332High-Voltage Switching ApplicationsFeatures Package Dimensions Hgih breakdown voltage.unit:mm Excellent hFE linearity.2003A Wide ASO and highly resistant to breakdown.[2SA1319/2SC3332] Adoption of MBIT process.Switching Test CircuitJEDEC : TO-92 B : Base(For PNP, the polarit

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G HAPPLICATIONS Emitter Capable of Being Used in The Low Frequency to High Collector Base Frequency Range JA DMillimeterREF.CLASSIF

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1313 TRANSISTOR (PNP)FEATURES Excellent hFE Linearity: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min)1. BASE Complements to the 2SC3325.2. EMITTER3. COLLECTORMARKING : ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

2SA1313 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features Excellent hFE Linearity 2.80 1.60: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90MARKING : ACO,ACY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

SMD Type TransistorsPNP Transistors 2SA1314Features1.70 0.1Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)Small Flat Package0.42 0.10.46 0.1Complementary to 2SC29821.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

SMD Type TransistorsPNP Transistors2SA1312SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-120V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1 Complementary to 2SC3324 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type orSMD Type TransistICsPNP Transistors2SA1313SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh voltage: VCEO = -50 V (min)1 2Small package+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-e