2SA1316GR - описание и поиск аналогов

2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit mm Audio Power Applications High DC current gain and excellent linearity h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C h = 60 (min), 120 (typ.), (V = 1 V, I = -4 A) FE (2) CE C Low saturation voltage V = -0.5 V (max) (I = -2 A, I = -50 mA) CE

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE hFE = 200 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Sm

Ordering number EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions Hgih breakdown voltage. unit mm Excellent hFE linearity. 2003A Wide ASO and highly resistant to breakdown. [2SA1319/2SC3332] Adoption of MBIT process. Switching Test Circuit JEDEC TO-92 B Base (For PNP, the polarit

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G H APPLICATIONS Emitter Capable of Being Used in The Low Frequency to High Collector Base Frequency Range J A D Millimeter REF. CLASSIF

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1313 TRANSISTOR (PNP) FEATURES Excellent hFE Linearity hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 1. BASE Complements to the 2SC3325. 2. EMITTER 3. COLLECTOR MARKING ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

2SA1313 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity 2.80 1.60 hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90 MARKING ACO,ACY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

SMD Type Transistors PNP Transistors 2SA1314 Features 1.70 0.1 Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SC2982 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

SMD Type Transistors PNP Transistors 2SA1312 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-120V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 Complementary to 2SC3324 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type or SMD Type TransistICs PNP Transistors 2SA1313 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = -50 V (min) 1 2 Small package +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-e