2SA132
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA132
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08
W
Tensión colector-base (Vcb): 9
V
Tensión colector-emisor (Vce): 9
V
Corriente del colector DC máxima (Ic): 0.01
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO44
Búsqueda de reemplazo de transistor bipolar 2SA132
2SA132
Datasheet (PDF)
0.1. Size:130K toshiba
2sa1329.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.4. Size:128K toshiba
2sa1328.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.5. Size:287K toshiba
2sa1320.pdf
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = -250 V Low C : 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -250 VCollector-emi
0.6. Size:48K panasonic
2sa1323 e.pdf
Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte
0.7. Size:44K panasonic
2sa1323.pdf
Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte
0.8. Size:209K jmnic
2sa1329.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas
0.9. Size:202K jmnic
2sa1327.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.10. Size:208K jmnic
2sa1328.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas
0.11. Size:216K inchange semiconductor
2sa1329.pdf
isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
0.12. Size:218K inchange semiconductor
2sa1327.pdf
isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
0.13. Size:215K inchange semiconductor
2sa1328.pdf
isc Silicon PNP Power Transistor 2SA1328DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
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