Справочник транзисторов. 2SA132

 

Биполярный транзистор 2SA132 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA132
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.08 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 9 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 9 V
   Макcимальный постоянный ток коллектора (Ic): 0.01 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO44

 Аналоги (замена) для 2SA132

 

 

2SA132 Datasheet (PDF)

 0.1. Size:130K  toshiba
2sa1329.pdf

2SA132
2SA132

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.2. Size:212K  toshiba
2sa1321.pdf

2SA132
2SA132

 0.3. Size:175K  toshiba
2sa1327a.pdf

2SA132
2SA132

 0.4. Size:128K  toshiba
2sa1328.pdf

2SA132
2SA132

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.5. Size:287K  toshiba
2sa1320.pdf

2SA132
2SA132

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = -250 V Low C : 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -250 VCollector-emi

 0.6. Size:48K  panasonic
2sa1323 e.pdf

2SA132
2SA132

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

 0.7. Size:44K  panasonic
2sa1323.pdf

2SA132
2SA132

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

 0.8. Size:209K  jmnic
2sa1329.pdf

2SA132
2SA132

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 0.9. Size:202K  jmnic
2sa1327.pdf

2SA132
2SA132

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.10. Size:208K  jmnic
2sa1328.pdf

2SA132
2SA132

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 0.11. Size:216K  inchange semiconductor
2sa1329.pdf

2SA132
2SA132

isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 0.12. Size:218K  inchange semiconductor
2sa1327.pdf

2SA132
2SA132

isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 0.13. Size:215K  inchange semiconductor
2sa1328.pdf

2SA132
2SA132

isc Silicon PNP Power Transistor 2SA1328DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Другие транзисторы... 2SA1318S , 2SA1318T , 2SA1318U , 2SA1319 , 2SA1319R , 2SA1319S , 2SA1319T , 2SA1319U , TIP41 , 2SA1320 , 2SA1321 , 2SA1322 , 2SA1323 , 2SA1324 , 2SA1325 , 2SA1326 , 2SA1327 .

 

 
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