2SA1329 Todos los transistores

 ..1. Size:130K  toshiba
 2sa1329.pdf

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 ..2. Size:209K  jmnic
 2sa1329.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 ..3. Size:216K  inchange semiconductor
 2sa1329.pdf

isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.1. Size:212K  toshiba
 2sa1321.pdf

 8.2. Size:175K  toshiba
 2sa1327a.pdf

 8.3. Size:128K  toshiba
 2sa1328.pdf

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 8.4. Size:287K  toshiba
 2sa1320.pdf

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = -250 V Low C 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emi

 8.5. Size:48K  panasonic
 2sa1323 e.pdf

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte

 8.6. Size:44K  panasonic
 2sa1323.pdf

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte

 8.7. Size:202K  jmnic
 2sa1327.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.8. Size:208K  jmnic
 2sa1328.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 8.9. Size:218K  inchange semiconductor
 2sa1327.pdf

isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max.)@I = -8A CE(sat) C High DC Current Gain- hFE= 70(Min.)@ I = -8A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.10. Size:215K  inchange semiconductor
 2sa1328.pdf

isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU