All Transistors. 2SA1329 Datasheet

 

2SA1329 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1329
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 2SA1329 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1329 Datasheet (PDF)

 ..1. Size:130K  toshiba
2sa1329.pdf

2SA1329 2SA1329

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 ..2. Size:209K  jmnic
2sa1329.pdf

2SA1329 2SA1329

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 ..3. Size:216K  inchange semiconductor
2sa1329.pdf

2SA1329 2SA1329

isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 8.1. Size:212K  toshiba
2sa1321.pdf

2SA1329 2SA1329

 8.2. Size:175K  toshiba
2sa1327a.pdf

2SA1329 2SA1329

 8.3. Size:128K  toshiba
2sa1328.pdf

2SA1329 2SA1329

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:287K  toshiba
2sa1320.pdf

2SA1329 2SA1329

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = -250 V Low C : 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -250 VCollector-emi

 8.5. Size:48K  panasonic
2sa1323 e.pdf

2SA1329 2SA1329

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

 8.6. Size:44K  panasonic
2sa1323.pdf

2SA1329 2SA1329

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

 8.7. Size:202K  jmnic
2sa1327.pdf

2SA1329 2SA1329

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.8. Size:208K  jmnic
2sa1328.pdf

2SA1329 2SA1329

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 8.9. Size:218K  inchange semiconductor
2sa1327.pdf

2SA1329 2SA1329

isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.10. Size:215K  inchange semiconductor
2sa1328.pdf

2SA1329 2SA1329

isc Silicon PNP Power Transistor 2SA1328DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N3906 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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