2SA1360O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1360O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 135 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO126
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2SA1360O Datasheet (PDF)
2sa1360.pdf

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC3423 Small collector output capacitance: Cob = 2.5 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColle
2sa1360.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL
2sa1360.pdf

isc Silicon PNP Power Transistor 2SA1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOComplement to Type 2SC3423Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SD882SQ-E | DTC115EEB
History: 2SD882SQ-E | DTC115EEB



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