All Transistors. 2SA1360O Datasheet

 

2SA1360O Datasheet and Replacement


   Type Designator: 2SA1360O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO126
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2SA1360O Datasheet (PDF)

 7.1. Size:130K  toshiba
 2sa1360.pdf pdf_icon

2SA1360O

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC3423 Small collector output capacitance: Cob = 2.5 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColle

 7.2. Size:109K  jmnic
 2sa1360.pdf pdf_icon

2SA1360O

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

 7.3. Size:216K  inchange semiconductor
 2sa1360.pdf pdf_icon

2SA1360O

isc Silicon PNP Power Transistor 2SA1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOComplement to Type 2SC3423Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Volta

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History: 2SC3044A | UN4212 | 2N5157 | PDTA123YMB | DTL1642 | 2SC4489 | 3DD5G

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