2SA1360O Specs and Replacement
Type Designator: 2SA1360O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO126
2SA1360O Substitution
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2SA1360O datasheet
2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC3423 Small collector output capacitance Cob = 2.5 pF (typ.) High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Colle... See More ⇒
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Complement to Type 2SC3423 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Detailed specifications: 2SA1358, 2SA1358O, 2SA1358Y, 2SA1359, 2SA1359O, 2SA1359Y, 2SA136, 2SA1360, 431, 2SA1360Y, 2SA1361, 2SA1362, 2SA1363, 2SA1364, 2SA1365, 2SA1366, 2SA1367
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