2SA1362 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120~400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

SMD Type orSMD Type TransistICsPNP Transistors 2SA1362SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesSuitable for driver stage of small motor.Small package.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC3423 Small collector output capacitance: Cob = 2.5 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColle

http://www.idc-com.co.jp 854-0065 6-41

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package

SMD Type TransistorsPNP Transistors2SA1366SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-400mA Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3441+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors 2SA13641.70 0.1FeaturesHigh Voltage VCEO = -60VHigh Collector Current (IC = -1A)High Collector Dissipation PC = 500mW0.42 0.1Small Package For Mounting 0.46 0.1Complementary to 2SC34441.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -60 VCollector-Emitter Voltag

SMD Type TransistorsPNP Transistors 2SA1363Features1.70 0.1High hFE : hFE = 150 to 800High Collector Current (IC = -2A)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34431.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -20 VCollector-Emitter Vo

SMD Type TransistorsPNP Transistors 2SA1368Features 1.70 0.1High Voltage VCEO = -100VHigh Collector Current (ICM = -800mA)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34381.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -100 VCollector-Emitter

SMD Type orSMD Type TransistICsPNP Transistors 2SA1365SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesLow collector to emitter saturation voltage.Excellent linearity nof DC forward current gain.1 2+0.1+0.050.95 -0.1Super mini package for easy mounting. 0.1-0.01+0.11.9 -0.1High collector current.High gain band width product.1.Base Complementary t

SMD Type TransistorsPNP Transistors 2SA13691.70 0.1FeaturesHigh Collector Current (ICM = -3A, IC = -1.5A)High Collector Dissipation PC = 500mWSmall Package For Mounting0.42 0.10.46 0.1Complementary to 2SC34391.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -20 V

isc Silicon PNP Power Transistor 2SA1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOComplement to Type 2SC3423Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Volta