2SA1381 Todos los transistores

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2SA1381 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1381

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SA1381

 

2SA1381 Datasheet (PDF)

1.1. 2sa1381.pdf Size:158K _sanyo

2SA1381
2SA1381

Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage : VCEO? 300V. unit:mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of MBIT pro

1.2. ksa1381 2sa1381.pdf Size:157K _fairchild_semi

2SA1381
2SA1381

March 2008 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency: 150MHz Full

4.1. 2sa1386b-a.pdf Size:213K _update

2SA1381
2SA1381

RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem

4.2. 2sa1386b.pdf Size:213K _update

2SA1381
2SA1381

RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem

4.3. 2sa1384.pdf Size:307K _toshiba

2SA1381
2SA1381

2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, V = -300 V CEO Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 6 pF (typ.) ob

4.4. 2sa1388.pdf Size:37K _toshiba

2SA1381

4.5. 2sa1382.pdf Size:227K _toshiba

2SA1381
2SA1381

4.6. 2sa1380.pdf Size:156K _sanyo

2SA1381
2SA1381

Ordering number:EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage : VCEO? 200V. unit:mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoption of FBE

4.7. 2sa1385.pdf Size:235K _nec

2SA1381
2SA1381

4.8. 2sa1385-z.pdf Size:235K _nec

2SA1381
2SA1381

4.9. 2sa1386.pdf Size:124K _mospec

2SA1381
2SA1381

A A A

4.10. 2sa1383.pdf Size:33K _no

2SA1381

4.11. 2sa1383 2sc3514.pdf Size:33K _no

2SA1381

4.12. 2sa1386 2sa1386a.pdf Size:183K _jmnic

2SA1381
2SA1381

JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3519/3519A APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS V

4.13. 2sa1383.pdf Size:155K _jmnic

2SA1381
2SA1381

JMnic Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu

4.14. 2sa1388.pdf Size:216K _jmnic

2SA1381
2SA1381

JMnic Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

4.15. 2sa1387.pdf Size:206K _jmnic

2SA1381
2SA1381

JMnic Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·High DC current gain APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

4.16. 2sa1389.pdf Size:160K _jmnic

2SA1381
2SA1381

JMnic Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified

4.17. 2sa1386.pdf Size:28K _sanken-ele

2SA1381

LAPT 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 2SA1386 2SA1386A 2SA1386 2SA1386A 0.1 9.6 2.0 VCBO 160 180 V 100max 100max

4.18. 2sa1386.pdf Size:146K _inchange_semiconductor

2SA1381
2SA1381

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3519 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VC

4.19. 2sa1383.pdf Size:85K _inchange_semiconductor

2SA1381
2SA1381

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbo

4.20. 2sa1388.pdf Size:206K _inchange_semiconductor

2SA1381
2SA1381

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

4.21. 2sa1387.pdf Size:195K _inchange_semiconductor

2SA1381
2SA1381

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·High DC current gain APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS V

4.22. 2sa1386 a.pdf Size:146K _inchange_semiconductor

2SA1381
2SA1381

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNI

4.23. 2sa1389.pdf Size:202K _inchange_semiconductor

2SA1381
2SA1381

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

4.24. 2sa1384.pdf Size:1306K _kexin

2SA1381
2SA1381

SMD Type Transistors PNP Transistors 2SA1384 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-300V ● Complementary to 2SC3515 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage V

4.25. 2sa1385-z.pdf Size:1535K _kexin

2SA1381
2SA1381

SMD Type Transistors PNP Transistors 2SA1385-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low VCE(sat):VCE(sat)=-0.18 V TYP. ● Complement to 2SC3518-Z 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta

Otros transistores... 2SA1378 , 2SA1379 , 2SA138 , 2SA1380 , 2SA1380C , 2SA1380D , 2SA1380E , 2SA1380F , 2N5551 , 2SA1381C , 2SA1381D , 2SA1381E , 2SA1381F , 2SA1382 , 2SA1383 , 2SA1384 , 2SA1385 .

 


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