2SA1393
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1393
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 120
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SA1393
2SA1393
Datasheet (PDF)
8.1. Size:236K sanyo
2sa1391 2sc3382.pdf
Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating
8.2. Size:173K sanyo
2sa1392 2sc3383.pdf
Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
8.3. Size:133K nec
2sa1395.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1395PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching, and is ideal for use as a driver in devices such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that does not req
8.6. Size:23K hitachi
2sa1390.pdf
2SA1390Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SA1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mACollector power dissipation PC 300 mWJu
8.7. Size:59K isahaya
2sa1399.pdf
http://www.idc-com.co.jp 854-0065 6-41
8.8. Size:225K jmnic
2sa1396.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION With TO-220Fa package Complement to type 2SC3568 Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25)
8.9. Size:218K inchange semiconductor
2sa1395.pdf
isc Silicon PNP Power Transistor 2SA1395DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -1ACE(sat) CHigh Switching SpeedComplement to Type 2SC3567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE
8.10. Size:218K inchange semiconductor
2sa1396.pdf
isc Silicon PNP Power Transistor 2SA1396DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -5ACE(sat) CHigh Switching SpeedComplement to Type 2SC3568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE
Otros transistores... 2SA1391S
, 2SA1391T
, 2SA1391U
, 2SA1392
, 2SA1392R
, 2SA1392S
, 2SA1392T
, 2SA1392U
, TIP127
, 2SA1394
, 2SA1395
, 2SA1396
, 2SA1397
, 2SA1398
, 2SA1399
, 2SA14
, 2SA1400
.