2SA1393 Datasheet and Replacement
Type Designator: 2SA1393
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
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2SA1393 Datasheet (PDF)
2sa1391 2sc3382.pdf

Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating
2sa1392 2sc3383.pdf

Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
2sa1395.pdf

DATA SHEETSILICON POWER TRANSISTOR2SA1395PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching, and is ideal for use as a driver in devices such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that does not req
Datasheet: 2SA1391S , 2SA1391T , 2SA1391U , 2SA1392 , 2SA1392R , 2SA1392S , 2SA1392T , 2SA1392U , 2SC2655 , 2SA1394 , 2SA1395 , 2SA1396 , 2SA1397 , 2SA1398 , 2SA1399 , 2SA14 , 2SA1400 .
History: KRC159F | UN2213 | PMD13K100 | 2C2907A | BLX71 | BLX33 | KRC885T
Keywords - 2SA1393 transistor datasheet
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History: KRC159F | UN2213 | PMD13K100 | 2C2907A | BLX71 | BLX33 | KRC885T



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