2SA143
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA143
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 0.015
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO1
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2SA143
Datasheet (PDF)
0.5. Size:29K sanyo
2sa1435.pdf 
Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e
0.6. Size:75K sanyo
2sa1434.pdf
Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SA1434]Features Very small-sized package permitting 2SA1434-usedsets to be made smaller, slimer. Adoption of FBET process.
0.7. Size:77K sanyo
2sa1437.pdf
Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig
0.8. Size:78K sanyo
2sa1433.pdf
Ordering number:EN3471PNP Epitaxial Planar Silicon Transistor2SA1433High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT (Gain-Bandwidth Product).unit:mm Small reverse transfer capacitance (Cre=1.3pF).2006A Adoption of FBET process.[2SA1433]EIAJ : SC-51 B : BaseSANYO : MP C :CollectorE : EmitterSpecificationsAbsolute Maximum Ratings
0.9. Size:29K sanyo
2sa1436.pdf
Ordering number:ENN2456PNP Epitaxial Planar Silicon Transistor2SA1436High hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003BFeatures[2SA1436] Adoption of MBIT process.5.04.04.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol
0.10. Size:732K kexin
2sa1434.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1434SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High DC current gain (hFE=500 to 1200).1 2Low collector-to-emitter saturation voltage+0.1+0.050.95-0.1 0.1 -0.01(VCE(sat) 0.5V).1.9+0.1-0.1High VEBO (VEBO 15V).1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25
Otros transistores... 2N3200
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.
History: RT1P434U
| SHA7530
| 2SC4387
| BD906
| 2N5994
