2SA1440
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SA1440
   Material: Si
   Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 15
 W
   Tensión colector-base (Vcb): 100
 V
   Corriente del colector DC máxima (Ic): 3
 A
   Temperatura operativa máxima (Tj): 135
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Ganancia de corriente contínua (hfe): 150
		   Paquete / Cubierta: 
TO220
				
				  
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2SA1440
 Datasheet (PDF)
 ..1.  Size:217K  inchange semiconductor
 2sa1440.pdf 
						 
isc Silicon PNP Power Transistor 2SA1440DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -2A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
 8.4.  Size:164K  jmnic
 2sa1443.pdf 
						 
JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
 8.5.  Size:218K  inchange semiconductor
 2sa1444.pdf 
						 
isc Silicon PNP Power Transistor 2SA1444DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
 8.6.  Size:217K  inchange semiconductor
 2sa1441.pdf 
						 
isc Silicon PNP Power Transistor 2SA1441DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power 
 8.7.  Size:218K  inchange semiconductor
 2sa1443.pdf 
						 
isc Silicon PNP Power Transistor 2SA1443DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
 8.8.  Size:217K  inchange semiconductor
 2sa1442.pdf 
						 
isc Silicon PNP Power Transistor 2SA1442DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
Otros transistores... 2SA1432R
, 2SA1433
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