Справочник транзисторов. 2SA1440

 

Биполярный транзистор 2SA1440 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1440
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 135 °C
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: TO220

 Аналоги (замена) для 2SA1440

 

 

2SA1440 Datasheet (PDF)

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2sa1440.pdf

2SA1440
2SA1440

isc Silicon PNP Power Transistor 2SA1440DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -2A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

 8.1. Size:45K  no
2sa1444.pdf

2SA1440
2SA1440

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2sa1443.pdf

2SA1440
2SA1440

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2sa1442.pdf

2SA1440
2SA1440

 8.4. Size:164K  jmnic
2sa1443.pdf

2SA1440
2SA1440

JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

 8.5. Size:218K  inchange semiconductor
2sa1444.pdf

2SA1440
2SA1440

isc Silicon PNP Power Transistor 2SA1444DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

 8.6. Size:217K  inchange semiconductor
2sa1441.pdf

2SA1440
2SA1440

isc Silicon PNP Power Transistor 2SA1441DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

 8.7. Size:218K  inchange semiconductor
2sa1443.pdf

2SA1440
2SA1440

isc Silicon PNP Power Transistor 2SA1443DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

 8.8. Size:217K  inchange semiconductor
2sa1442.pdf

2SA1440
2SA1440

isc Silicon PNP Power Transistor 2SA1442DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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