Биполярный транзистор 2SA1440
Даташит. Аналоги
Наименование производителя: 2SA1440
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 100
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 135
°C
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора:
TO220
Аналог (замена) для 2SA1440
-
подбор ⓘ биполярного транзистора по параметрам
2SA1440
Datasheet (PDF)
..1. Size:217K inchange semiconductor
2sa1440.pdf 
isc Silicon PNP Power Transistor 2SA1440DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -2A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
8.4. Size:164K jmnic
2sa1443.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
8.5. Size:218K inchange semiconductor
2sa1444.pdf 
isc Silicon PNP Power Transistor 2SA1444DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
8.6. Size:217K inchange semiconductor
2sa1441.pdf 
isc Silicon PNP Power Transistor 2SA1441DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
8.7. Size:218K inchange semiconductor
2sa1443.pdf 
isc Silicon PNP Power Transistor 2SA1443DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
8.8. Size:217K inchange semiconductor
2sa1442.pdf 
isc Silicon PNP Power Transistor 2SA1442DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
Другие транзисторы... 2SA1432R
, 2SA1433
, 2SA1434
, 2SA1435
, 2SA1436
, 2SA1437
, 2SA1438
, 2SA144
, S9013
, 2SA1441
, 2SA1442
, 2SA1443
, 2SA1444
, 2SA145
, 2SA1450
, 2SA1450R
, 2SA1450S
.
