2SA1441
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1441
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 100
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SA1441
2SA1441
Datasheet (PDF)
..1. Size:217K inchange semiconductor
2sa1441.pdf 
isc Silicon PNP Power Transistor 2SA1441DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
8.4. Size:164K jmnic
2sa1443.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
8.5. Size:218K inchange semiconductor
2sa1444.pdf
isc Silicon PNP Power Transistor 2SA1444DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
8.6. Size:218K inchange semiconductor
2sa1443.pdf
isc Silicon PNP Power Transistor 2SA1443DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t
8.7. Size:217K inchange semiconductor
2sa1442.pdf
isc Silicon PNP Power Transistor 2SA1442DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
8.8. Size:217K inchange semiconductor
2sa1440.pdf
isc Silicon PNP Power Transistor 2SA1440DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -2A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power
Otros transistores... 2SA1433
, 2SA1434
, 2SA1435
, 2SA1436
, 2SA1437
, 2SA1438
, 2SA144
, 2SA1440
, D882P
, 2SA1442
, 2SA1443
, 2SA1444
, 2SA145
, 2SA1450
, 2SA1450R
, 2SA1450S
, 2SA1450T
.
