2SA1441 Specs and Replacement
Type Designator: 2SA1441
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SA1441 datasheet
..1. Size:217K inchange semiconductor
2sa1441.pdf 
isc Silicon PNP Power Transistor 2SA1441 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power ... See More ⇒
8.4. Size:164K jmnic
2sa1443.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC... See More ⇒
8.5. Size:218K inchange semiconductor
2sa1444.pdf
isc Silicon PNP Power Transistor 2SA1444 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t... See More ⇒
8.6. Size:218K inchange semiconductor
2sa1443.pdf
isc Silicon PNP Power Transistor 2SA1443 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t... See More ⇒
8.7. Size:217K inchange semiconductor
2sa1442.pdf
isc Silicon PNP Power Transistor 2SA1442 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power... See More ⇒
8.8. Size:217K inchange semiconductor
2sa1440.pdf
isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -0.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -2A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power... See More ⇒
Detailed specifications: 2SA1433, 2SA1434, 2SA1435, 2SA1436, 2SA1437, 2SA1438, 2SA144, 2SA1440, D209L, 2SA1442, 2SA1443, 2SA1444, 2SA145, 2SA1450, 2SA1450R, 2SA1450S, 2SA1450T
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