2SA1492O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1492O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 130 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de transistor bipolar 2SA1492O
2SA1492O Datasheet (PDF)
2sa1492o 2sa1492p 2sa1492y.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emit
2sa1492.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1492.pdf
2SA1492Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 180 V ICBO VCB=180V 100max AVCEO 180 V IEBO VEB=6
2sa1492t4bl.pdf
2SA1492T4BLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -180 VCEOV Emitt
2sa1492.pdf
isc Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050