2SA1492O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1492O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3P
2SA1492O Transistor Equivalent Substitute - Cross-Reference Search
2SA1492O Datasheet (PDF)
2sa1492o 2sa1492p 2sa1492y.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emit
2sa1492.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1492.pdf
2SA1492Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 180 V ICBO VCB=180V 100max AVCEO 180 V IEBO VEB=6
2sa1492t4bl.pdf
2SA1492T4BLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -180 VCEOV Emitt
2sa1492.pdf
isc Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: 2SA1487 , 2SA1488 , 2SA1488A , 2SA1489 , 2SA149 , 2SA1490 , 2SA1491 , 2SA1492 , D965 , 2SA1492P , 2SA1492Y , 2SA1493 , 2SA1493O , 2SA1493P , 2SA1493Y , 2SA1494 , 2SA1494G .
History: 2STR1160 | 8550 | PBSS4160T | S601T | NSV60200LT1G | KMMT491 | BUT30
History: 2STR1160 | 8550 | PBSS4160T | S601T | NSV60200LT1G | KMMT491 | BUT30
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