2SA1590
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1590
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200(typ)
MHz
Capacitancia de salida (Cc): 5.5
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
SPA
Búsqueda de reemplazo de transistor bipolar 2SA1590
2SA1590
Datasheet (PDF)
8.1. Size:155K sanyo
2sa1592.pdf 
Ordering number:EN2510APNP/NPN Epitaxial Planar Silicon Transistors2SA1592/2SC4134High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2045BFeatures [2SA1592/2SC4134] Adoption FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package
8.3. Size:112K sanyo
2sa1593 2sc4135.pdf
Ordering number:ENN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135] Adoption of FBET, MBIT processes.6.52.35.00.5 High breakdown voltage and large current capacity. 4 Fast switching speed.
8.4. Size:295K onsemi
2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
8.5. Size:388K onsemi
2sa1593 2sc4135.pdf
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
8.6. Size:150K jmnic
2sa1598.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1598 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
8.7. Size:150K jmnic
2sa1599.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1599 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
8.8. Size:314K shindengen
2sa1598.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1598 Case : ITO-220Unit : mm(TP7T4)-7A PNPRATINGS
8.9. Size:289K shindengen
2sa1599.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1599 Case : ITO-220Unit : mm(TP10T4)-10A PNPRATINGS
8.10. Size:193K inchange semiconductor
2sa1598.pdf
isc Silicon PNP Power Transistor 2SA1598DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea
8.11. Size:237K inchange semiconductor
2sa1592.pdf
isc Silicon PNP Power Transistor 2SA1592DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4134APPLICATIONSPower supplies,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aS
8.12. Size:237K inchange semiconductor
2sa1593.pdf
isc Silicon PNP Power Transistor 2SA1593DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4135APPLICATIONSPower supplies, relay drivers,lamp drivers.ABSOLUTE MAXIMUM RATINGS(T
8.13. Size:208K inchange semiconductor
2sa1599.pdf
isc Silicon PNP Power Transistor 2SA1599DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ideal
Otros transistores... 2SA1585
, 2SA1586G
, 2SA1586O
, 2SA1586Y
, 2SA1587
, 2SA1588
, 2SA1589
, 2SA159
, A1941
, 2SA1591
, 2SA1592
, 2SA1592R
, 2SA1592S
, 2SA1592T
, 2SA1593
, 2SA1593R
, 2SA1593S
.
