2SA15H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColl

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2

2SA1586Bipolar Transistors Silicon PNP Epitaxial Type2SA15861. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = -50 V(3) High collector current: IC = -150 mA (max)(4) High hFE: hFE = 70 to 400(5) Excellent hFE linearity: hFE

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

Ordering number:EN3171PNP/NPN Epitaxial Planar Silicon Transistors2SA1575/2SC4080High-Frequency Amplifier,Wide-Band Amplifier ApplicationsFeatures Package Dimensions High fT.unit:mm High breakdown voltage.2038 Small reverse transfer capacitance and excellent[2SA1575/2SC4080]high-frequency characteristic. Adoption of FBET process.E : EmitterC : Collector

Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25

Ordering number:ENN2439BPNP/NPN Epitaxial Planar Silicon Transistors2SA1540/2SC3955High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1540/2SC3955]Features 8.04.03.31.0 1.0 High gain-bandwidth product : fT=300MHz. High breakdown voltage : VCEO=20

Ordering number : EN2262D2SA1552 / 2SC4027SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1552 / 2SC4027ApplicationsApplications Converters, inverters, color TV audio output.Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

Ordering number:EN2510APNP/NPN Epitaxial Planar Silicon Transistors2SA1592/2SC4134High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2045BFeatures [2SA1592/2SC4134] Adoption FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package

Ordering number:EN2261APNP Epitaxial Planar Silicon Transistors2SA1562High-hFE AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2045BFeatures [2SA1562] Adoption of MBIT process. High DC current gain. Large current capacity. Low collector-to-emitter saturation voltage. High VEBO.1 : Base2 : Collector3 :

Ordering number:ENN2150BPNP/NPN Epitaxial Planar Silicon Transistors2SA1526/2SC3920Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1526/2SC3920]5.0Features4.04.0 On-chip bias resistance : R1=10k , R2=10k . Large current capacity : IC

Ordering number : EN2101D2SA1507 / 2SC3902SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1507 / 2SC3902160V / 1.5A Switching ApplicationsApplications Color TV audio output, converters, inverters.Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina

Ordering number:ENN2151CPNP/NPN Epitaxial Planar Silicon Transistors2SA1527/2SC3921Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1527/2SC3921]5.0Features4.04.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Large current capacity :

Ordering number:ENN2162BPNP/NPN Epitaxial Planar Silicon Transistors2SA1522/2SC3916Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1522/2SC3916]2.24.0Features On-chip bias resistance : R1=10k , R2=10k . Small-sized package : SPA.0.4

Ordering number:ENN2152BPNP/NPN Epitaxial Planar Silicon Transistors2SA1528/2SC3922Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2003B[2SA1528/2SC3922]5.0Features4.04.0 On-chip bias resistance : R1=2.2K , R2=10k . Large current capacity : I

Ordering number:ENN2163BPNP/NPN Epitaxial Planar Silicon Transistors2SA1523/2SC3917Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1523/2SC3917]2.2Features 4.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Small-sized package : SPA.0.4

Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applications (With Bias Resistance)Application Package Dimensions Switching circuits, inverters circuits, inferfaceunit:mmcircuits, driver circuits.2018B[2SA1518/2SC3912]Features0.4 On-chip bias resistance : R1=10k , R2=10k . 0.163 Small-sized package : CP.0

Ordering number:ENN2160BPNP/NPN Epitaxial Planar Silicon Transistors2SA1519/2SC3913Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1519/2SC3913]Features0.4 On-chip bias resistance : R1=4.7k , R2=4.7k . 0.163 Small-sized package : CP.

Ordering number:ENN2166APNP/NPN Epitaxial Planar Silicon Transistors2SA1521/2SC3915Switching Applications (with Bias Resistance)Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2018B[2SA1521/2SC3915]Features0.4 On-chip bias resistance : R1=2.2k , R2=2.2k . 0.163 Small-sized package : CP.

Ordering number:ENN2153BPNP/NPN Epitaxial Planar Silicon Transistors2SA1529/2SC3923Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1529/2SC3923]5.0Features4.04.0 On-chip bias resistance : R1=2.2k , R2=2.2k . Large current capacity :

Ordering number:ENN2149BPNP/NPN Epitaxial Planar Silicon Transistors2SA1525/2SC3919Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1525/2SC3919]2.24.0Features On-chip bias resistance : R1=2.2k , R2=2.2k . Small-sized package : SPA.0.

Ordering number:ENN2161BPNP/NPN Epitaxial Planar Silicon Transistors2SA1520/2SC3914Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1520/2SC3914]Features0.4 On-chip bias resistance : R1=2.2k , R2=10k . 0.163 Small-sized package : CP.0

Ordering number:ENN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135] Adoption of FBET, MBIT processes.6.52.35.00.5 High breakdown voltage and large current capacity. 4 Fast switching speed.

Ordering number:ENN2438BPNP/NPN Epitaxial Planar Silicon Transistors2SA1539/2SC3954High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1539/SC3954]8.0Features4.03.31.0 1.0 High fT : fT=500MHz. High breakdown voltage : VCEO=120Vmin.3.0 Sm

Ordering number:ENN2436CPNP/NPN Epitaxial Planar Silicon Transistors2SA1537/2SC3952High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1537/2SC3952]8.0Features4.03.31.0 1.0 High fT : fT=700MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Ordering number:ENN2437BPNP/NPN Epitaxial Planar Silicon Transistors2SA1538/2SC3953High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1538/2SC3953]8.0Features4.03.31.0 1.0 High fT : fT=400MHz. High breakdown voltage : VCEO=120Vmin.3.0 S

Ordering number:ENN2440BPNP/NPN Epitaxial Planar Silicon Transistors2SA1541/2SC3956High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1541/2SC3956]8.0Features4.03.31.0 1.0 High gain-bandwidth product : fT=300MHz. High breakdown voltage : VCEO=2

Ordering number:ENN2435BPNP/NPN Epitaxial Planar Silicon Transistors2SA1536/2SC3951High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1536/2SC3951]8.0Features4.03.31.0 1.0 High fT : fT=600MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Ordering number:ENN2164BPNP/NPN Epitaxial Planar Silicon Transistors2SA1524/2SC3918Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1524/2SC3918]2.24.0Features On-chip bias resistance : R1=2.2k , R2=10k . Small-sized package : SPA.0.4

2SA1514K FRADatasheetHigh-voltage Amplifier Transistor(-120V,-50mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-120VIC-50mASMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=-120V)2)Complements the 2SC3906K FRAlApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasic

General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit : mm) General purpose small signal amplifier. UMT3F2.00.90.32Features (3)1) Excellent hFE linearity. 2) Complements the 2SC4081UB. (1) (2) 0.65 0.65 0.131.3Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions(1) Base(2) Emit

2SA1577DatasheetMedium Power Transistor (-32V, -500mA)lOutlinelParameter Value UMT3VCEO-32VIC-500mASOT-323SC-70 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operation.3)Complements the 2SC4097.lApplicationlGENERAL PURPOSE SMALL SIGNAL AM

AEC-Q101 QualifiedMedium Power Transistor (-32V, -05A) 2SA1577FRAFeatures Dimensions (Unit : mm)1) Large IC.2SA1577FRA2SA1577ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.00.23) Complements the 2SC4097. 2SC4097FRA1.30.1 0.90.10.65 0.65 0.70.10.2(1) (2)Structure 00.1Epitaxial planer type (3)PNP silicon transistor

2SA1576A FRADatasheet (-50V, -150mA)AEC-Q101 ll SOT-323 SC-70 VCEO-50VIC-150mAUMT3l ll l1)hFE2)2SC4081 FRAll

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

2SA1579 FRADatasheetHigh-voltage Amplifier Transistor (-120V, -50mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO-120VIC-50mAUMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=-120V)2)Complements the 2SC4102 FRA.lApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasic

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec

2SA1576U3 HZGDatasheetGeneral Purpose Transistor (-50V, -150mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO-50VIC-150mAUMT3lFeatures lInner circuitl l1)Excellent hFE linearity.2)Complements the 2SC4081U3 HZG.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIERlPackaging specificationslPackage

High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA15792) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25C) 1.25Parameter Symbol Limits Unit2.1Collector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 V0.1Min.Emitter-base volt

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

Ordering number : EN2262F2SA1552/2SC4027Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FAApplications Converters, inverters, color TV audio outputFeatures Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402

Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se

2SA1576ART1General PurposeAmplifier TransistorsPNP Surface Mounthttp://onsemi.comFeatures Moisture Sensitivity Level: 1 Pb-Free Package is AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 Vdc1 2Emitter-Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTERCollector Current

Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Power Transistors2SA1535, 2SA1535ASilicon PNP epitaxial planar typeFor low-frequency driver and high power amplificationUnit: mmComplementary to 2SC3944 and 2SC3944A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.1 0.1High transition frequency fTMakes up a complementary pair w

Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1512Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC17884.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.Allowing supply with the radial taping.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Param

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Transistor2SA1512Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC17884.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.Allowing supply with the radial taping.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Param

UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS SWITCHING TRANSISTOR APPLICAITONS *Color TV audio output, converters, inverters. FEATURES *High breakdown voltage *Large current capacitance. *High-speed switching 1TO-1261:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -180 VCollector-Emitter Volt

2SA1566Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1566Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mW

AAA

2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA AL Low VCE(sat). Ideal for low-voltage operation. 33Top View C BCLASSIFICATION OF hFE 11 22Product-Rank 2SA1577-P 2SA1577-Q 2SA1577

2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-323 The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. AL33FEATURES Top View C B1 Complements of the 2SC4081 1 2 Excellent hFE Linear

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi

2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 AL33Top View C B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SA1579-R 2SA1579-S DRange 180~390

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1576A TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

JMnic Product Specification Silicon PNP Power Transistors 2SA1598 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1567 DESCRIPTION With TO-220F package Complement to type 2SC4064 Low collector-emitter saturation voltage APPLICATIONS For DC motor driver ,chopper regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute

JMnic Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION With TO-3PML package High current capability Low collector saturation voltage APPLICATIONS For high speed and high power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterMaximum absolute ratings(Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1516 DESCRIPTION With TO-3P(I) package Complement to type 2SC3907 High collector voltage APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

JMnic Product Specification Silicon PNP Power Transistors 2SA1553 DESCRIPTION With TO-3PL package Complement to type 2SC4029 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SA1599 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

E(250)Built-in Diode at CEBEquivalent Low VCE (sat) 2SA1568curcuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)Application : DC Motor Driver, Chopper Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20 (TO220F)Symbol Conditions Ratings UnitSymbol Ratings Unit0

LOW VCE (sat) 2SA1567Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064)Application : DC Motor Driver, Chopper Regulator and General Purpose(Ta=25C) External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsUnitRatingsSymbol Ratings Unit Symbol Conditions0.24.20.210.1c0.52.8 AVCBO 50 V ICBO VCB=50

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1598 Case : ITO-220Unit : mm(TP7T4)-7A PNPRATINGS

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1599 Case : ITO-220Unit : mm(TP10T4)-10A PNPRATINGS

2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

2SA1 57 9TRANSISTOR(PNP)SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC

2SA1577 SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1576A SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -6 V IC Collector Curre

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

2SA1579 SOT-323 Transistor(PNP)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

2SA1576APNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-323MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -60 VCollector-Emitter VoltageVCEO-50 VVEBOEmitter-Base Voltage -6.0 VICCollector Current - Continuous -150 mATotal Device DissipationPD200 mWT =25CATj CJunction Temperature +150TstgStorage Temperatu

2SA1576AxT1 SOT-323 Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter RoHS product for packing code suffix "G" Value Unit Halogen free product for packing code suffix "H" VCBO Collector-Base V

2SA1577W(BR3CG1577W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features 2SC1741SBR3DG1741SWLarge Ic low Vce(sat),complementary pair with the 2SC1741S(BR3DG1741SW). / Applications

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements.L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G SeriesF S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL2SA1577QT1G SeriesF We declare that the material of product compliance with RoHS requirements.S-L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

SMD Type TransistorsPNP Transistors2SA1588 Features Excellent hFE linearity : hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC41181.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

SMD Type TransistorsPNP Transistors2SA1566SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Low frequency amplifier1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Vo

SMD Type TransistorsPNP Transistors2SA1532 Features High transition frequency fT. Complementary to 2SC39301.Base2.Emitter3.Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po

SMD Type TransistorsPNP Transistors2SA1518SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1 Complementary to 2SC3912 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1502SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SC38631.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type TransistorsPNP Transistors2SA1510SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1-0.01+0.1 Complementary to 2SC3900 1.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SA1577 Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector

SMD Type TransistorsPNP Transistors2SA1530ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-150mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co

SMD Type TransistorsPNP Transistors2SA1576A Features Excellent hFE linearity Complements the 2SC40811.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power

SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

SMD Type TransistorsPNP Transistors2SA15751.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent0.42 0.10.46 0.1 high-frequency characteristic. Complementary to 2SC40801.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200

SMD Type TransistorsPNP Transistors2SA1519SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SC39131.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1520SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SC39141.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SA1514KSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Breakdown Voltage Lead Free/RoHS Compliant.1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3906K+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

SMD Type TransistorsPNP Transistors2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC

SMD Type orSMD Type TransistICsPNP Transistors 2SA1580SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh fT.Small reverse transfer capacitance.1 2+0.1+0.050.95 -0.1Adoption of FBET process. 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC41041.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base vo

SMD Type TransistorsPNP Transistors2SA1521SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC39151.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

SMD Type TransistorsPNP Transistors2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA

CHENMKO ENTERPRISE CO.,LTD2SA1577GPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage V* Low cob. Cob=7.0pF(Typ.)CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capabili

2SA1507(3CA1507) PNP /SILICON PNP TRANSISTOR :, Purpose: Color TV audio output, converters, inverters. 2SC3902(3DA3902) Features: High V , Large I , complementary to 2SC3902(3DA3902). CEOC/Absolute maximum ratings(Ta=25)

2SA1576ARPNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 150 mAPower Dissipation Ptot 200 mW OJunctio

isc Silicon PNP Power Transistor 2SA1552DESCRIPTIONHigh voltage and large current capacityUltrahigh-speed switchingSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4027APPLICATIONSConverters , inverters and color TV audio outputABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2SA1598DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea

isc Silicon PNP Power Transistor 2SA1567DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ (V = -1V,I = -6A)FE CE CLow Saturation Voltage-: V = -0.35V(Max)@ (I = -6A, I -0.6A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC motor driver, c

isc Silicon PNP Power Transistor 2SA1592DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4134APPLICATIONSPower supplies,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W

isc Silicon PNP Power Transistor 2SA1513DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Currrent CapacityLow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -12ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and high power switchingapplications.ABSOL

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1516DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier

isc Silicon PNP Power Transistor 2SA1593DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4135APPLICATIONSPower supplies, relay drivers,lamp drivers.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2SA1553DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC4029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 120W high fidelity audio frequency amp

isc Silicon PNP Power Transistor 2SA1546DESCRIPTIONThe 2SA1546 is designed for uses of high-resolution monitorTV applications.This makes it possible to raise the video bandOf high-resolution monitor TVs to 50MHz.FEATURESCollectorEmitter Sustaining Voltage-: V = -250 V(Min)CBOComplement to Type 2SC4001Minimum Lot-to-Lot variations for robust deviceperformance and

isc Silicon PNP Power Transistors 2SA1535/ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min) -2SA1535(BR)CEO= -180V(Min) -2SA1535AGood Linearity of hFEComplement to Type 2SC3944/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency driver and high power amplifi-cation, is optimum

isc Silicon PNP Power Transistor 2SA1507DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC3902Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV audio output, converters andinverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

isc Silicon PNP Power Transistor 2SA1599DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ideal