2SA15H - описание и поиск аналогов

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Coll

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2

2SA1586 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1586 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = -50 V (3) High collector current IC = -150 mA (max) (4) High hFE hFE = 70 to 400 (5) Excellent hFE linearity hFE

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

Ordering number EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions High fT. unit mm High breakdown voltage. 2038 Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. Adoption of FBET process. E Emitter C Collector

Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25

Ordering number ENN2439B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1540/2SC3955 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1540/2SC3955] Features 8.0 4.0 3.3 1.0 1.0 High gain-bandwidth product fT=300MHz. High breakdown voltage VCEO=20

Ordering number EN2262D 2SA1552 / 2SC4027 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1552 / 2SC4027 Applications Applications Converters, inverters, color TV audio output. Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

Ordering number EN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package

Ordering number EN2261A PNP Epitaxial Planar Silicon Transistors 2SA1562 High-hFE AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers. unit mm 2045B Features [2SA1562] Adoption of MBIT process. High DC current gain. Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. 1 Base 2 Collector 3

Ordering number ENN2150B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1526/2SC3920 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1526/2SC3920] 5.0 Features 4.0 4.0 On-chip bias resistance R1=10k , R2=10k . Large current capacity IC

Ordering number EN2101D 2SA1507 / 2SC3902 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1507 / 2SC3902 160V / 1.5A Switching Applications Applications Color TV audio output, converters, inverters. Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina

Ordering number ENN2151C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1527/2SC3921 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1527/2SC3921] 5.0 Features 4.0 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Large current capacity

Ordering number ENN2162B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1522/2SC3916 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1522/2SC3916] 2.2 4.0 Features On-chip bias resistance R1=10k , R2=10k . Small-sized package SPA. 0.4

Ordering number ENN2152B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1528/2SC3922 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2003B [2SA1528/2SC3922] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2K , R2=10k . Large current capacity I

Ordering number ENN2163B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1523/2SC3917 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1523/2SC3917] 2.2 Features 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Small-sized package SPA. 0.4

Ordering number ENN2159B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application Package Dimensions Switching circuits, inverters circuits, inferface unit mm circuits, driver circuits. 2018B [2SA1518/2SC3912] Features 0.4 On-chip bias resistance R1=10k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number ENN2160B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1519/2SC3913 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1519/2SC3913] Features 0.4 On-chip bias resistance R1=4.7k , R2=4.7k . 0.16 3 Small-sized package CP.

Ordering number ENN2166A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1521/2SC3915 Switching Applications (with Bias Resistance) Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2018B [2SA1521/2SC3915] Features 0.4 On-chip bias resistance R1=2.2k , R2=2.2k . 0.16 3 Small-sized package CP.

Ordering number ENN2153B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1529/2SC3923] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2k , R2=2.2k . Large current capacity

Ordering number ENN2149B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1525/2SC3919 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1525/2SC3919] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=2.2k . Small-sized package SPA. 0.

Ordering number ENN2161B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1520/2SC3914 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1520/2SC3914] Features 0.4 On-chip bias resistance R1=2.2k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed.

Ordering number ENN2438B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1539/2SC3954 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1539/SC3954] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=500MHz. High breakdown voltage VCEO=120Vmin. 3.0 Sm

Ordering number ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1537/2SC3952] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=700MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Ordering number ENN2437B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1538/2SC3953 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1538/2SC3953] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=400MHz. High breakdown voltage VCEO=120Vmin. 3.0 S

Ordering number ENN2440B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1541/2SC3956 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1541/2SC3956] 8.0 Features 4.0 3.3 1.0 1.0 High gain-bandwidth product fT=300MHz. High breakdown voltage VCEO=2

Ordering number ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1536/2SC3951] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=600MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Ordering number ENN2164B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1524/2SC3918 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1524/2SC3918] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=10k . Small-sized package SPA. 0.4

2SA1514K FRA Datasheet High-voltage Amplifier Transistor (-120V,-50mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO -120V IC -50mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC3906K FRA lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic

General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit mm) General purpose small signal amplifier. UMT3F 2.0 0.9 0.32 Features (3) 1) Excellent hFE linearity. 2) Complements the 2SC4081UB. (1) (2) 0.65 0.65 0.13 1.3 Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions (1) Base (2) Emit

2SA1577 Datasheet Medium Power Transistor (-32V, -500mA) lOutline l Parameter Value UMT3 VCEO -32V IC -500mA SOT-323 SC-70 lFeatures l 1)Large IC. lInner circuit l ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operation. 3)Complements the 2SC4097. lApplication l GENERAL PURPOSE SMALL SIGNAL AM

AEC-Q101 Qualified Medium Power Transistor (-32V, -05A) 2SA1577FRA Features Dimensions (Unit mm) 1) Large IC. 2SA1577FRA 2SA1577 ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.0 0.2 3) Complements the 2SC4097. 2SC4097FRA 1.3 0.1 0.9 0.1 0.65 0.65 0.7 0.1 0.2 (1) (2) Structure 0 0.1 Epitaxial planer type (3) PNP silicon transistor

2SA1576A FRA Datasheet (-50V, -150mA) AEC-Q101 l l SOT-323 SC-70 VCEO -50V IC -150mA UMT3 l l l l 1)hFE 2)2SC4081 FRA l l

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

2SA1579 FRA Datasheet High-voltage Amplifier Transistor (-120V, -50mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO -120V IC -50mA UMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC4102 FRA. lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic

Medium Power Transistor ( 32V, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + + 4 0.2 2 0.2 - - 4.5 +0.2 -0.1 (IC / IB = 500mA / 50mA) 1.5 +0.2 + 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 Structure -0.05 + + 0.5 0.1 0.

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

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2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05

Medium Power Transistor ( 32V, 1A) 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SA1515S 2SB1237 + 2.5 0.2 VCE(sat) = 0.2V(Typ.) + + + - 4 0.2 2 0.2 6.8 0.2 - - - (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05 Epitaxial planar type + PNP silicon transistor 0.5 0.1 - 0.45 +0.15 2.5

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist

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Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -120 V Collec

2SA1576U3 HZG Datasheet General Purpose Transistor (-50V, -150mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO -50V IC -150mA UMT3 lFeatures lInner circuit l l 1)Excellent hFE linearity. 2)Complements the 2SC4081U3 HZG. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications l Package

High-voltage Amplifier Transistor ( 120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25 C) 1.25 Parameter Symbol Limits Unit 2.1 Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V 0.1Min. Emitter-base volt

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

Ordering number EN2262F 2SA1552/2SC4027 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FA Applications Converters, inverters, color TV audio output Features Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402

Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se

2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 Emitter-Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTER Collector Current

Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym

Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v

Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Unit mm Complementary to 2SC3944 and 2SC3944A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.1 0.1 High transition frequency fT Makes up a complementary pair w

Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym

Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz

Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz

Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC1788 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Param

Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC1788 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Param

UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS SWITCHING TRANSISTOR APPLICAITONS *Color TV audio output, converters, inverters. FEATURES *High breakdown voltage *Large current capacitance. *High-speed switching 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Volt

2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW

A A A

2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA A L Low VCE(sat). Ideal for low-voltage operation. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 Product-Rank 2SA1577-P 2SA1577-Q 2SA1577

2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-323 The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. A L 3 3 FEATURES Top View C B 1 Complements of the 2SC4081 1 2 Excellent hFE Linear

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current A L Complementary to 2SC4116 3 3 Small Package Top View C B 1 1 2 2 K E APPLICATIONS General Purpose Amplifi

2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 A L 3 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SA1579-R 2SA1579-S D Range 180 390

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1576A TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

JMnic Product Specification Silicon PNP Power Transistors 2SA1598 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1567 DESCRIPTION With TO-220F package Complement to type 2SC4064 Low collector-emitter saturation voltage APPLICATIONS For DC motor driver ,chopper regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute

JMnic Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION With TO-3PML package High current capability Low collector saturation voltage APPLICATIONS For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Maximum absolute ratings(Ta=25 ) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1516 DESCRIPTION With TO-3P(I) package Complement to type 2SC3907 High collector voltage APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

JMnic Product Specification Silicon PNP Power Transistors 2SA1553 DESCRIPTION With TO-3PL package Complement to type 2SC4029 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 )

JMnic Product Specification Silicon PNP Power Transistors 2SA1599 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

E (250 ) Built-in Diode at C E B Equivalent Low VCE (sat) 2SA1568 curcuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application DC Motor Driver, Chopper Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Symbol Conditions Ratings Unit Symbol Ratings Unit 0

LOW VCE (sat) 2SA1567 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application DC Motor Driver, Chopper Regulator and General Purpose (Ta=25 C) External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Unit Ratings Symbol Ratings Unit Symbol Conditions 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 50 V ICBO VCB= 50

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1598 Case ITO-220 Unit mm (TP7T4) -7A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1599 Case ITO-220 Unit mm (TP10T4) -10A PNP RATINGS

2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC

2SA1577 SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1576A SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Curre

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

2SA1579 SOT-323 Transistor(PNP) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

2SA1576A PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-323 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current - Continuous -150 mA Total Device Dissipation PD 200 mW T =25 C A Tj C Junction Temperature +150 Tstg Storage Temperatu

2SA1576AxT1 SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter RoHS product for packing code suffix "G" Value Unit Halogen free product for packing code suffix "H" VCBO Collector-Base V

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576A

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series F S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1577QT1G Series F We declare that the material of product compliance with RoHS requirements. S-L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

SMD Type Transistors PNP Transistors 2SA1588 Features Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

SMD Type Transistors PNP Transistors 2SA1566 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low frequency amplifier 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Vo

SMD Type Transistors PNP Transistors 2SA1532 Features High transition frequency fT. Complementary to 2SC3930 1.Base 2.Emitter 3.Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po

SMD Type Transistors PNP Transistors 2SA1518 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 Complementary to 2SC3912 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1502 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SC3863 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type Transistors PNP Transistors 2SA1510 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 Complementary to 2SC3900 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1577 Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector

SMD Type Transistors PNP Transistors 2SA1530A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-150mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co

SMD Type Transistors PNP Transistors 2SA1576A Features Excellent hFE linearity Complements the 2SC4081 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power

SMD Type Transistors PNP Transistors 2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

SMD Type Transistors PNP Transistors 2SA1575 1.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent 0.42 0.1 0.46 0.1 high-frequency characteristic. Complementary to 2SC4080 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200

SMD Type Transistors PNP Transistors 2SA1519 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SC3913 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1520 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SC3914 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1514K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Breakdown Voltage Lead Free/RoHS Compliant. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3906K +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

SMD Type Transistors PNP Transistors 2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC

SMD Type or SMD Type TransistICs PNP Transistors 2SA1580 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT. Small reverse transfer capacitance. 1 2 +0.1 +0.05 0.95 -0.1 Adoption of FBET process. 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC4104 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base vo

SMD Type Transistors PNP Transistors 2SA1521 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC3915 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

SMD Type Transistors PNP Transistors 2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA

CHENMKO ENTERPRISE CO.,LTD 2SA1577GP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capabili

2SA1576AR PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junctio

isc Silicon PNP Power Transistor 2SA1552 DESCRIPTION High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4027 APPLICATIONS Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2SA1598 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -3.5A CE(sat) C Large Current Capability-I = -7A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is idea

isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ (V = -1V,I = -6A) FE CE C Low Saturation Voltage- V = -0.35V(Max)@ (I = -6A, I -0.6A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC motor driver, c

isc Silicon PNP Power Transistor 2SA1592 DESCRIPTION High breakdown voltage and large current capacity Fast switching speed Small and slim package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4134 APPLICATIONS Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W

isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Currrent Capacity Low Collector Saturation Voltage- V = -0.5V(Max.)@ I = -12A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and high power switching applications. ABSOL

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3907 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier

isc Silicon PNP Power Transistor 2SA1593 DESCRIPTION High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4135 APPLICATIONS Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2SA1553 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC4029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 120W high fidelity audio frequency amp

isc Silicon PNP Power Transistor 2SA1546 DESCRIPTION The 2SA1546 is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. FEATURES Collector Emitter Sustaining Voltage- V = -250 V(Min) CBO Complement to Type 2SC4001 Minimum Lot-to-Lot variations for robust device performance and

isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) -2SA1535 (BR)CEO = -180V(Min) -2SA1535A Good Linearity of h FE Complement to Type 2SC3944/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum

isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC3902 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV audio output, converters and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -5A CE(sat) C Large Current Capability-I = -10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal