2SA160
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA160
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.02
W
Tensión colector-base (Vcb): 15
V
Corriente del colector DC máxima (Ic): 0.004
A
Temperatura operativa máxima (Tj): 65
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO1
Búsqueda de reemplazo de transistor bipolar 2SA160
2SA160
Datasheet (PDF)
0.2. Size:104K sanyo
2sa1606 2sc4159.pdf 
Ordering number:EN2535PNP/NPN Epitaxial Planar Silicon Transistors2SA1606/2SC4159High-Voltage Switching, AF 100WDriver ApplicationsApplications Package Dimensions High-voltage switching, AF power amplifier, 100Wunit:mmoutput predrivers.2041[2SA1606/2SC4159]Features Micaless package facilitating mounting.E : EmitterC : CollectorB : Base( ) : 2SA1606SANYO :
0.3. Size:149K sanyo
2sa1607 2sc4168.pdf
Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C
0.5. Size:156K jmnic
2sa1601.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emi
0.6. Size:150K jmnic
2sa1600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
0.7. Size:298K shindengen
2sa1601.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1601 Case : ITO-220Unit : mm(TP15T4)-15A PNPRATINGS
0.8. Size:291K shindengen
2sa1600.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1600 Case : ITO-220Unit : mm(TP12T4)-12A PNPRATINGS
0.9. Size:1666K kexin
2sa1608.pdf
SMD Type TransistorsPNP Transistors2SA1608 Features High fT : fT=400MHz Complementary to 2SC37391.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss
0.10. Size:974K kexin
2sa1607.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1607SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFast switching speed.High gain-bandwidth product.1 2+0.1+0.050.95-0.1 0.1-0.01Low saturation voltage.+0.11.9-0.1 Complementary to 2SC41681.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base
0.11. Size:210K inchange semiconductor
2sa1601.pdf
isc Silicon PNP Power Transistor 2SA1601DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -7.5ACE(sat) CLarge Current Capability-I = -15ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ide
0.12. Size:148K inchange semiconductor
2sa1600.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas
0.13. Size:213K inchange semiconductor
2sa1606.pdf
isc Silicon PNP Power Transistor 2SA1606DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC4159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, AF power amplifier,100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=2
Otros transistores... 2SA1594
, 2SA1595
, 2SA1596
, 2SA1597
, 2SA1598
, 2SA1599
, 2SA15H
, 2SA16
, MJE340
, 2SA1600
, 2SA1601
, 2SA1602
, 2SA1603
, 2SA1604
, 2SA1604R
, 2SA1604S
, 2SA1604T
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