2SA1616. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1616 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1616

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 typ MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SPA

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2SA1616 datasheet

..1. Size:262K 1
2sa1616 2sc4195.pdf pdf_icon

8.1. Size:248K toshiba
2sa1618.pdf pdf_icon

2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S

8.2. Size:192K nec
2sa1612.pdf pdf_icon

8.3. Size:194K nec
2sa1611.pdf pdf_icon

8.4. Size:118K nec
2sa1615-z.pdf pdf_icon

DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES Large current capacity IC(DC) -10 A, IC(pulse) -15 A High hF

8.5. Size:271K nec
2sa1610.pdf pdf_icon

8.6. Size:51K panasonic
2sa1619 e.pdf pdf_icon

Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb

8.7. Size:47K panasonic
2sa1619.pdf pdf_icon

8.8. Size:24K hitachi
2sa1617.pdf pdf_icon

2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1617 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Jun

8.9. Size:104K secos
2sa1611.pdf pdf_icon

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain A High Voltage L 3 Complementary to 2SC4177 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SA1611-M4 2SA1611-M5 Range 90 180 135 27

8.10. Size:1044K jiangsu
2sa1611.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

8.11. Size:274K htsemi
2sa1611.pdf pdf_icon

2SA1 61 1 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Colle

8.12. Size:328K kexin
2sa1617.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1617 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C

8.13. Size:1187K kexin
2sa1612.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1612 Features High DC Current Gain Complementary to 2SC4180 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di

8.14. Size:1146K kexin
2sa1611.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC4177 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA

8.15. Size:235K galaxy
2sa1615-z.pdf pdf_icon

Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity Pb IC(DC) -10A,IC(pulse) -15A. Lead-free High hFE and low collector saturation voltage hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat) -0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci

8.16. Size:110K wej
2sa1611a.pdf pdf_icon

RoHS 2SA1611 SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 05 3. COLLECTOR Power dissipation PCM 0.15 W (Tamb=25 ) 2. 30 0. 05 Collector current ICM -0.1 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (T

8.17. Size:201K inchange semiconductor
2sa1615.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1615 DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available for

8.18. Size:205K inchange semiconductor
2sa1615-z.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1615-Z DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available fo

Otros transistores... 2SA1609 , 2SA161 , 2SA1610 , 2SA1611 , 2SA1612 , 2SA1613 , 2SA1614 , 2SA1615 , 2SC2655 , 2SA1617 , 2SA1618 , 2SA1619 , 2SA162 , 2SA1620 , 2SA1621 , 2SA1622 , 2SA1623 .