2SA1616 Specs and Replacement
Type Designator: 2SA1616
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 typ MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SPA
- BJT ⓘ Cross-Reference Search
2SA1616 datasheet
8.1. Size:248K toshiba
2sa1618.pdf 
2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h h = 120 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S... See More ⇒
8.4. Size:118K nec
2sa1615-z.pdf
DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES Large current capacity IC(DC) -10 A, IC(pulse) -15 A High hF... See More ⇒
8.6. Size:51K panasonic
2sa1619 e.pdf
Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb... See More ⇒
8.7. Size:47K panasonic
2sa1619.pdf
Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC4208 and 2SC4208A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symb... See More ⇒
8.8. Size:24K hitachi
2sa1617.pdf
2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1617 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Jun... See More ⇒
8.9. Size:104K secos
2sa1611.pdf
2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain A High Voltage L 3 Complementary to 2SC4177 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SA1611-M4 2SA1611-M5 Range 90 180 135 27... See More ⇒
8.10. Size:1044K jiangsu
2sa1611.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol... See More ⇒
8.11. Size:274K htsemi
2sa1611.pdf
2SA1 61 1 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Colle... See More ⇒
8.12. Size:328K kexin
2sa1617.pdf
SMD Type Transistors PNP Transistors 2SA1617 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C... See More ⇒
8.13. Size:1187K kexin
2sa1612.pdf
SMD Type Transistors PNP Transistors 2SA1612 Features High DC Current Gain Complementary to 2SC4180 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di... See More ⇒
8.14. Size:1146K kexin
2sa1611.pdf
SMD Type Transistors PNP Transistors 2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC4177 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA ... See More ⇒
8.15. Size:235K galaxy
2sa1615-z.pdf
Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity Pb IC(DC) -10A,IC(pulse) -15A. Lead-free High hFE and low collector saturation voltage hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat) -0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci... See More ⇒
8.16. Size:110K wej
2sa1611a.pdf
RoHS 2SA1611 SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 05 3. COLLECTOR Power dissipation PCM 0.15 W (Tamb=25 ) 2. 30 0. 05 Collector current ICM -0.1 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (T... See More ⇒
8.17. Size:201K inchange semiconductor
2sa1615.pdf
isc Silicon PNP Power Transistor 2SA1615 DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available for ... See More ⇒
8.18. Size:205K inchange semiconductor
2sa1615-z.pdf
isc Silicon PNP Power Transistor 2SA1615-Z DESCRIPTION Large current capacity I = -10A I =-15A C(DC) C(pulse) High h and low saturation voltage FE h = 200min (V =-2V,I =-0.5A) FE CE C V -0.25V (I =-4A,I =-0.05A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1615 is available fo... See More ⇒
Detailed specifications: 2SA1609, 2SA161, 2SA1610, 2SA1611, 2SA1612, 2SA1613, 2SA1614, 2SA1615, 2SC2655, 2SA1617, 2SA1618, 2SA1619, 2SA162, 2SA1620, 2SA1621, 2SA1622, 2SA1623
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