2SA1623 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1623
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta: SPA
Búsqueda de reemplazo de 2SA1623
2SA1623 datasheet
2sa1620.pdf
2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60
2sa1621.pdf
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -
Otros transistores... 2SA1616 , 2SA1617 , 2SA1618 , 2SA1619 , 2SA162 , 2SA1620 , 2SA1621 , 2SA1622 , D965 , 2SA1624 , 2SA1625 , 2SA1626 , 2SA1627 , 2SA1628 , 2SA1629 , 2SA163 , 2SA1630 .
History: 2SB884 | MPS6575
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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