2SA1646 Datasheet. Equivalente

 ..1. Size:139K  nec
 2sa1646 2sa1646-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

 ..2. Size:161K  jmnic
 2sa1646.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

 ..3. Size:217K  inchange semiconductor
 2sa1646.pdf

isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features

 0.1. Size:210K  renesas
 2sa1646-z.pdf

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Silicon Power Transistor Jul 01, 2010 Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to- emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

 0.2. Size:199K  inchange semiconductor
 2sa1646-z.pdf

isc Silicon PNP Power Transistor 2SA1646-Z DESCRIPTION Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a very low V , is ideal for use CE(sat)

 8.1. Size:96K  sanyo
 2sa1641.pdf

Ordering number EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SA1641] Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller. 1 Base 2 Collector 3

 8.2. Size:268K  renesas
 2sa1649-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:156K  nec
 2sa1648 2sa1648-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.2 6.5 0.2 This transistor is ideal for use in switching regulators, DC/DC 5.0 0.2 0.5 0.

 8.4. Size:140K  nec
 2sa1645-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

 8.5. Size:157K  nec
 2sa1647-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

 8.6. Size:160K  nec
 2sa1647.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

 8.7. Size:143K  nec
 2sa1649 2sa1649-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid dr

 8.8. Size:145K  nec
 2sa1648-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers,

 8.9. Size:143K  nec
 2sa1645 2sa1645-z.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

 8.10. Size:144K  jmnic
 2sa1640.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=2

 8.11. Size:158K  jmnic
 2sa1644.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

 8.12. Size:162K  jmnic
 2sa1645.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

 8.13. Size:143K  jmnic
 2sa1643.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDI

 8.14. Size:209K  inchange semiconductor
 2sa1640.pdf

isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ (I = -3A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, driver and power switching applications. ABSOLU

 8.15. Size:216K  inchange semiconductor
 2sa1644.pdf

isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

 8.16. Size:206K  inchange semiconductor
 2sa1648.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1648 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

 8.17. Size:198K  inchange semiconductor
 2sa1645-z.pdf

isc Silicon PNP Power Transistor 2SA1645-Z DESCRIPTION Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other

 8.18. Size:204K  inchange semiconductor
 2sa1647-z.pdf

isc Silicon PNP Power Transistor 2SA1647-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators,

 8.19. Size:217K  inchange semiconductor
 2sa1645.pdf

isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 8.20. Size:200K  inchange semiconductor
 2sa1647.pdf

isc Silicon PNP Power Transistor 2SA1647 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, D

 8.21. Size:200K  inchange semiconductor
 2sa1649.pdf

isc Silicon PNP Power Transistor 2SA1649 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transis

 8.22. Size:205K  inchange semiconductor
 2sa1648-z.pdf

isc Silicon PNP Power Transistor 2SA1648-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

 8.23. Size:205K  inchange semiconductor
 2sa1649-z.pdf

isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

 8.24. Size:209K  inchange semiconductor
 2sa1643.pdf

isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.3A) CE(sat) C B Complement to Type 2SC4327 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE