2SA1659 Todos los transistores

 ..1. Size:155K  jmnic
 2sa1659 2sa1659a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C

 ..2. Size:196K  inchange semiconductor
 2sa1659.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type 2SC4370 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage appl

 ..3. Size:115K  inchange semiconductor
 2sa1659 2sa1659a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SY

 8.1. Size:88K  sanyo
 2sa1656 2sc4363.pdf

 8.2. Size:88K  sanyo
 2sa1654 2sc4361.pdf

 8.3. Size:161K  nec
 2sa1652.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1652 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot

 8.4. Size:148K  nec
 2sa1650.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-

 8.5. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf

 8.6. Size:151K  jmnic
 2sa1658.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

 8.7. Size:175K  jmnic
 2sa1651.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Em

 8.8. Size:214K  inchange semiconductor
 2sa1658.pdf

isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) CEO Complement to Type 2SC4369 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM

 8.9. Size:210K  inchange semiconductor
 2sa1657.pdf

isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) CEO Complement to Type 2SC4368 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSO

 8.10. Size:213K  inchange semiconductor
 2sa1651.pdf

isc Silicon PNP Power Transistor 2SA1651 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) CEO Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN