2SA1659
Datasheet and Replacement
Type Designator: 2SA1659
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 145
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO202
- BJT Cross-Reference Search
2SA1659
Datasheet (PDF)
..1. Size:155K jmnic
2sa1659 2sa1659a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C
..2. Size:196K inchange semiconductor
2sa1659.pdf 

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type 2SC4370Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage appl
..3. Size:115K inchange semiconductor
2sa1659 2sa1659a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fTAPPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SY
8.3. Size:161K nec
2sa1652.pdf 

DATA SHEETSILICON POWER TRANSISTOR2SA1652PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andot
8.4. Size:148K nec
2sa1650.pdf 

DATA SHEETSILICON POWER TRANSISTOR2SA1650PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andother low-
8.6. Size:151K jmnic
2sa1658.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
8.7. Size:175K jmnic
2sa1651.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Em
8.8. Size:214K inchange semiconductor
2sa1658.pdf 

isc Silicon PNP Power Transistor 2SA1658DESCRIPTIONCollector-Emitter Breakdown VoltageV = -30V(Min)CEOComplement to Type 2SC4369Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM
8.9. Size:210K inchange semiconductor
2sa1657.pdf 

isc Silicon PNP Power Transistor 2SA1657DESCRIPTIONCollector-Emitter Breakdown VoltageV = -150V(Min)CEOComplement to Type 2SC4368Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSO
8.10. Size:213K inchange semiconductor
2sa1651.pdf 

isc Silicon PNP Power Transistor 2SA1651DESCRIPTIONCollector-Emitter Breakdown VoltageV = -100V(Min)CEOFast switching speedLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: 2SA1651
, 2SA1652
, 2SA1653
, 2SA1654
, 2SA1655
, 2SA1656
, 2SA1657
, 2SA1658
, C1815
, 2SA166
, 2SA1660
, 2SA1661
, 2SA1662
, 2SA1663
, 2SA1664
, 2SA1666
, 2SA1667
.
Keywords - 2SA1659 transistor datasheet
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