2SA1659 Specs and Replacement
Type Designator: 2SA1659
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 145 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO202
- BJT ⓘ Cross-Reference Search
2SA1659 datasheet
..1. Size:155K jmnic
2sa1659 2sa1659a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C... See More ⇒
..2. Size:196K inchange semiconductor
2sa1659.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type 2SC4370 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage appl... See More ⇒
..3. Size:115K inchange semiconductor
2sa1659 2sa1659a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SY... See More ⇒
8.3. Size:161K nec
2sa1652.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1652 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot... See More ⇒
8.4. Size:148K nec
2sa1650.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-... See More ⇒
8.6. Size:151K jmnic
2sa1658.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒
8.7. Size:175K jmnic
2sa1651.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Em... See More ⇒
8.8. Size:214K inchange semiconductor
2sa1658.pdf
isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) CEO Complement to Type 2SC4369 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM... See More ⇒
8.9. Size:210K inchange semiconductor
2sa1657.pdf
isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) CEO Complement to Type 2SC4368 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSO... See More ⇒
8.10. Size:213K inchange semiconductor
2sa1651.pdf
isc Silicon PNP Power Transistor 2SA1651 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) CEO Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
Detailed specifications: 2SA1651, 2SA1652, 2SA1653, 2SA1654, 2SA1655, 2SA1656, 2SA1657, 2SA1658, 2N3904, 2SA166, 2SA1660, 2SA1661, 2SA1662, 2SA1663, 2SA1664, 2SA1666, 2SA1667
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