2SA1662 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba

2SA1662TRANSISTOR (PNP)FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ

2SA1662SOT-89 Transistor(PNP)1. BASE SOT-894.62. COLLECTOR B4.41 1.61.81.41.42 3. EMITTER 2.63 4.252.43.75 0.8FeaturesMIN0.530.400.480.442x) Complementary to KTC4374 0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage

Ordering number:EN2972PNP Epitaxial Planar Silicon Transistor2SA1669High-Frequency Amplifier ApplicationsFeatures Package Dimensions High cutoff frequnecy : fT=3.0GHz typ.unit:mm High power gain : MAG=11dB typ (f=0.9GHz)2018A Small noise figure : NF=2.0dB typ (f=0.9GHz)[2SA1669]C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum Rati

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -120 V

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) S

2SA1667/1668Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)Application : TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20 (TO220F)RatingsRatingsSymbol Unit Symbol ConditionsUnit0.22SA1667 2SA1668 2SA1667 2SA1668 0.24.210.1c0.52.8

Transys ElectronicsL I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM : 0.5 W (Tamb=25) 2 3. EMITTER 3 Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE

2SA1 664TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect

2SA1 661SOT-89-3L TRANSISTOR(PNP)1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

SMD Type TransistorsPNP Transistors2SA1669SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle

SMD Type TransistorsPNP Transistors2SA1664 Features1.70 0.1 Small Flat Package High Current Application High Transition Frequency0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col

isc Silicon PNP Power Transistor 2SA1668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -10V, I = -0.7A)FE CE CComplement to Type 2SC4382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose a

isc Silicon PNP Power Transistor 2SA1667DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -10V, I = -0.7A)FE CE CComplement to Type 2SC4381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose a