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JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 2SA1667 2SA1668 2SA1667 2SA1668 0.2 4.2 10.1 c0.5 2.8

isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a

Ordering number EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions High cutoff frequnecy fT=3.0GHz typ. unit mm High power gain MAG=11dB typ (f=0.9GHz) 2018A Small noise figure NF=2.0dB typ (f=0.9GHz) [2SA1669] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum Rati

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1662 TRANSISTOR (PNP) 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1661 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V

JMnic Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION With TO-220F package Complement to type 2SC4381/4382 APPLICATIONS For TV vertical output ,audio output driver and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) S

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors SOT-89 2SA1664 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 0.5 W (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM -0.8 A Collector-base voltage V(BR)CBO -35 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

2SA1 664 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collect

2SA1662 TRANSISTOR (PNP) FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units 1 VCBO Collector-Base Voltage -80 V 2 3. EMITTER VCEO Collector-Emitter Voltage -80 V 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ

2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0

2SA1662 SOT-89 Transistor(PNP) 1. BASE SOT-89 4.6 2. COLLECTOR B 4.4 1 1.6 1.8 1.4 1.4 2 3. EMITTER 2.6 3 4.25 2.4 3.75 0.8 Features MIN 0.53 0.40 0.48 0.44 2x) Complementary to KTC4374 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

SMD Type Transistors PNP Transistors 2SA1669 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Colle

SMD Type Transistors PNP Transistors 2SA1664 Features 1.70 0.1 Small Flat Package High Current Application High Transition Frequency 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Col

isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = -10V, I = -0.7A) FE CE C Complement to Type 2SC4382 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose a