2SA1689 Todos los transistores

 

2SA1689 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1689
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70(typ) MHz
   Capacitancia de salida (Cc): 2.4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92
 

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2SA1689 PDF detailed specifications

 ..1. Size:74K  sanyo
2sa1689.pdf pdf_icon

2SA1689

Ordering number EN3233 PNP Epitaxial Planar Silicon Transistor 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003A frequency chacacteristic. [2SA1689] Excellent DC current gain. Adoption of FBET process. JEDEC TO-92 B Base EIAJ SC... See More ⇒

 8.1. Size:184K  toshiba
2sa1681.pdf pdf_icon

2SA1689

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi... See More ⇒

 8.2. Size:172K  toshiba
2sa1680.pdf pdf_icon

2SA1689

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit mm Power Switching Applications Low collector-emitter saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW (Ta = 25 C) High-speed switching tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute... See More ⇒

 8.3. Size:152K  sanyo
2sa1685 2sc4443.pdf pdf_icon

2SA1689

Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒

Otros transistores... 2SA1682 , 2SA1683 , 2SA1685 , 2SA1687 , 2SA1688 , 2SA1688-3 , 2SA1688-4 , 2SA1688-5 , 2SC4793 , 2SA168A , 2SA169 , 2SA1690 , 2SA1692 , 2SA1693 , 2SA1693O , 2SA1693P , 2SA1693Y .

History: 2N3734S

 

 
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