2SA1729 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN3133PNP Epitaxial Planar Silicon Transistor2SA1729High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1729] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vie

SMD Type TransistorsPNP Transistors2SA17291.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage.0.42 0.10.46 0.1 Fast switching speed. Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) o

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 5.5 pF (typ.)

Ordering number:EN3159APNP Epitaxial Planar Silicon Transistor2SA1724High-Definiton CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=1.5GHz typ).unit:mm High current (IC=300mA).2038A Adoption of FBET process.[2SA1724]1 : Base2 : Collector3 : EmitterMarking : AJ(Bottom view)SpecificationsSANYO : PCPAbsolute Maximum

Ordering number:EN4668PNP Epitaxial Planar Silicon Transistors2SA1723High-Frequency Amplifier, Medium-PowerAmplifier ApplicationsApplications Package Dimensions Wideband amplifiers.unit:mm High-frequency drivers.2009B[2SA1723]Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process.1 : Emitter2 : Collector3 : BaseJEDE

Ordering number:EN3132PNP Epitaxial Planar Silicon Transistor2SA1728High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Low collector-to-emitter saturation voltage.2018A Fast switching speed.[2SA1728] Small-sized package.C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta =

DATA SHEETDARLINGTON POWER TRANSISTOR2SA1720PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATIONThis transistor is ideal for high-precision control such as PWMPart No. Packagecontrol for pulse motors or brushless motors in OA and FA equipment.2SA1720 Isolated TO-220FEATUR

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION With TO-220F package Complement to type 2SC4511 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION With TO-220C package Complement to type 2SC4512 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

2SA1725Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511)Application : Audio and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings UnitSymbol Conditions Ratings Unit0.24.20.210.1c0.5VCBO 80 V VCB=80V 10max A 2.8ICBOVCEO 80 VIEBO VEB=6V 10

2SA1726Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512)Application : Audio and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SA1726 Symbol Conditions 2SA1726 UnitUnit0.24.80.210.20.12.0VCBO 80 ICBO VCB=80V 10max AVVCEO 80 IEBO VEB=6V 10m

SMD Type TransistorsPNP Transistors2SA1724SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.3A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

SMD Type TransistorsPNP Transistors2SA1721SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-300V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC4497 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

SMD Type TransistorsPNP Transistors2SA1728SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-40V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Coll

isc Silicon PNP Power Transistor 2SA1725DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedComplement to Type 2SC4511Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1726DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedComplement to Type 2SC4512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V